Support

Support Options

Submit a Support Ticket

 
Home › Groups › M. Ashraful Alam Research Group › Resources › Online Presentations › Universality of NBTI-Induced Interface Trap Generation and Its Impact on ID Degradation in Strained/ Unstrained PMOS Transistors › Reviews
This resource has a 8.2 Ranking

Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›

Usage Stats
Total: updated 03 May 2013
Users: 209
Reviews & Citations
Google/IEEE: updated 22 Apr 2010
Avg. Review: 5.0 out of 5 stars
Citations: 3

Universality of NBTI-Induced Interface Trap Generation and Its Impact on ID Degradation in Strained/ Unstrained PMOS Transistors

By Ahmad Ehteshamul Islam1, Muhammad A. Alam2

1. Air Force Research Laboratory 2. Purdue University

View Presentation (SWF)

Licensed according to this deed.

M. Ashraful Alam Research Group

This resource belongs to the M. Ashraful Alam Research Group group.

See also

No results found.

Get Help

Get Involved

Legal

nanoHUB.org, a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies.