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HomeGroupsM. Ashraful Alam Research GroupResourcesOnline PresentationsUniversality of NBTI-Induced Interface Trap Generation and Its Impact on ID Degradation in Strained/ Unstrained PMOS Transistors › Supporting Docs

Universality of NBTI-Induced Interface Trap Generation and Its Impact on ID Degradation in Strained/ Unstrained PMOS Transistors

By Ahmad Ehteshamul Islam1, Muhammad A. Alam2

1. Air Force Research Laboratory 2. Purdue University

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M. Ashraful Alam Research Group

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Supporting Docs

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