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Home › Groups › M. Ashraful Alam Research Group › Resources › Online Presentations › Universality of NBTI-Induced Interface Trap Generation and Its Impact on ID Degradation in Strained/ Unstrained PMOS Transistors › Supporting Docs

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Universality of NBTI-Induced Interface Trap Generation and Its Impact on ID Degradation in Strained/ Unstrained PMOS Transistors

By Ahmad Ehteshamul Islam¹, Muhammad Alam²

1. University of Illinois at Urbana-Champaign 2. Purdue University

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Supporting Docs

(SWF) Presentation (with audio)
(PDF, 248.6 Kb) Presentation Slides
(PDF, 462.37 Kb) Presentation Paper

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