Despite extensive use of strained technology, it is still unclear whether NBTI-induced NIT generation in strained transistors is substantially different from that of unstrained ones. Here, we present a comprehensive theory for NIT generation in strained/unstrained transistors and show its universality over a wide range of strain. We further propose that an appropriately designed/optimized transistor might reduce/eliminate NBTI being a concern for CMOS scaling.
Khaled Ahmed (Applied Materials) for Devices
Souvik Mahapatra (IIT-Bombay) and Abu Naser Zainuddin (Purdue) for Discussions
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