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This resource is an introduction to the theory ballistic nanotransistors. No transistor is fully ballistic, but analyzing nanotransistors by neglecting scattering processes provides new insights into the performance and limits of nanoscale MOSFETs. The materials presented below introduces the basic theory and shows how it can be applied to current problems in device research. The concepts are illustrated by exercises that make use of live simulations with the program, FETToy.
This series is a set of materials formerly known as a "Learning Module." The presentations are meant to be viewed in sequence to get a full understanding of the topic. Please click on the following links in order to access each of the presentations in sequence.
FETToy Simulation Tool computes ballistic I-V characteristics for a conventional MOSFETs, Nanowire MOSFETs and Carbon NanoTube MOSFETs.
You will need the FETToy Simulation tool to proceed with this section of the learning module. You can launch the tool by pressing "Launch FETToy Session". The tool opens in a separate window. Please keep the window open till you have completed this portion of the learning module. Each exercise requires you to use different parameters. You may want to reset the tool before moving from one exercise to the next.
Researchers should cite this work as follows:
Mark Lundstrom (2005), "Ballistic Nanotransistors - Learning Module," https://nanohub.org/resources/612.