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KP Nanowire/UTB FET

By Mincheol Shin

KAIST, Daejeon, Korea

Simulate Nanowire/UTB FETs Using KP method

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Archive Version 1.0.2
Published on 17 May 2011
Latest version: 1.0.3. All versions

doi:10.4231/D3CJ87K6H cite this

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This tool simulates Si PMOS nanowire FETs based on the k.p method. Ballistic transport is assumed.

This tool performs “full quantum” transport calculations, meaning that full 3D Schrodinger equations with open boundary conditions (formulated in the NEGF framework) are solved to obtain the hole density and current. The 3D Poisson equation is iteratively solved together with the transport equations to yield the self-consistent potential. The NEGF transport equations are solved via the mode-space transformation developed by the author (see the reference paper).

The k.p Hamiltonian can be either 6×6 or 3×3, depending on whether the spin-orbit (SO) is turned on or off, respectively. Turning on SO usually makes little difference, while it considerably slows down the simulation (usually 4~5 times slower). Users can specify k.p parameters, although it is recommended to use the default parameters.

Together with the nanowireMG tool which was developed by the same author, one can simulate both NMOS and PMOS nanowire FETs. The two tools will be eventually merged into one tool. In a near future, this tool will be extended to simulate ultra-thin-body (UTB) structures, III-V MOSFETs (8×8 KP method will be used for these; Band-to-Band tunneling effect will be considered), and devices with Schottky barrier contacts.

Tags, a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.