This first-time user guide provides an introduction to MOSCap. The MOSCap tool simulates the one-dimensional (along the growth direction) electrostatics in typical single and dual-gate Metal-Oxide-Semiconductor device structures as a function of device size, geometry, oxide charge, temperature, doping concentration and applied frequency. We also provide some basic definitions in this document.
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- Mark Lundstrom (2008), "ECE 612 Lecture 3: MOS Capacitors"
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- Dragica Vasileska; Gerhard Klimeck (2006), "Padre," DOI: 10254/nanohub-r941.3.
Researchers should cite this work as follows:
SungGeun Kim; Benjamin P Haley; Gerhard Klimeck (2009), "MOSCap: First-Time User Guide," https://nanohub.org/resources/6546.