This first-time user guide provides an introduction to MOSCap. The MOSCap tool simulates the one-dimensional (along the growth direction) electrostatics in typical single and dual-gate Metal-Oxide-Semiconductor device structures as a function of device size, geometry, oxide charge, temperature, doping concentration and applied frequency. We also provide some basic definitions in this document.

1. Dragica Vasileska (2008), "MOS Capacitors Description"
2. Dragica Vasileska (2008), "MOSFET Operation Description"
3. Mark Lundstrom (2008), "ECE 612 Lecture 3: MOS Capacitors"
4. S.-H. Lo, et. al., IBM Journal of Research and Development, volume 43, number 3, 1999
5. Deal B. E., Electron Devices, IEEE Transactions on, 1980
   PADRE
6. Dragica Vasileska; Gerhard Klimeck (2006), "Padre," DOI: 10254/nanohub-r941.3.
7. http://nanohub.org/resource_files/tools/padre/doc/index.html

Researchers should cite this work as follows:

• SungGeun Kim; Benjamin P Haley; Gerhard Klimeck (2009), "MOSCap: First-Time User Guide," https://nanohub.org/resources/6546.

1. capacitance-voltage
2. MOS
3. MOSCAP
4. MOS capacitors
5. MOSFET
6. nanoelectronics
7. tool:abacus
8. tool:moscap