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Simulates High Electron Mobility Transistor (HEMT), single-gate MOSFET, and double-gate MOSFET in effective mass approximation

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Version 1.1.0 - published on 05 Jan 2011

doi:10.4231/D34F1MJ1B cite this

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Version Released DOI Handle Published
1.1.0 05 Jan 2011 doi:10.4231/D34F1MJ1B yes
1.0.2 06 Apr 2010 doi:10.4231/D3CJ87K51 no
1.0.1 03 Dec 2009 doi:10.4231/D3S756J9K no
1.0.0 16 Sep 2009 doi:10.4231/D39Z90B7V no
1.0 08 Sep 2009 doi:10.4231/D3GQ6R200 no, a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.