This tool version is unpublished and cannot be run. If you would like to have this version staged, you can put a request through HUB Support.
The standard techniques such as drift-diffusion cannot capture quantization of the energy levels resulting from the strong confinement of the electrons in a quantum well channel and tunneling currents in nanoscale transistors. Thus the need to develop modeling techniques to aid experiments and explore novel device designs arises. OMEN_HFET employs a real-space effective mass 2-D Schrödinger-Poisson solver  to analyze transport characteristics of nanoscale transistors. A full quantum mechanical treatment of source, drain and gate contacts enables OMEN_HFET to simulate entire bias regime i.e. gate leakage, subthreshold as well as high gate bias regime. For computational reasons the simulation domain is restricted to the gate contact region and source/drain contacts are modeled via two series resistances. The simulation approach is verified for recently reported InAs HEMTs where a good quantitative match to experimental data is obtained . The device simulator can be used to gain deeper insight into the electron transport and thereby to design the device for optimal performance when scaled to nanometer regime.