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OMEN_FET

Simulates High Electron Mobility Transistor (HEMT), single-gate MOSFET, and double-gate MOSFET in effective mass approximation

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Archive Version 1.0.0
Published on 16 Sep 2009
Latest version: 1.1.0. All versions

doi:10.4231/D39Z90B7V cite this

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Abstract

The standard techniques such as drift-diffusion cannot capture quantization of the energy levels resulting from the strong confinement of the electrons in a quantum well channel and tunneling currents in nanoscale transistors. Thus the need to develop modeling techniques to aid experiments and explore novel device designs arises. OMEN_HFET employs a real-space effective mass 2-D Schrödinger-Poisson solver [1] to analyze transport characteristics of nanoscale transistors. A full quantum mechanical treatment of source, drain and gate contacts enables OMEN_HFET to simulate entire bias regime i.e. gate leakage, subthreshold as well as high gate bias regime. For computational reasons the simulation domain is restricted to the gate contact region and source/drain contacts are modeled via two series resistances. The simulation approach is verified for recently reported InAs HEMTs where a good quantitative match to experimental data is obtained [2]. The device simulator can be used to gain deeper insight into the electron transport and thereby to design the device for optimal performance when scaled to nanometer regime.

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