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RTD with NEGF Demonstration: Basic RTD Asymmetric

By Gerhard Klimeck

Electrical and Computer Engineering, Purdue University, West Lafayette, IN



Published on


This video shows the analysis of a 2 barrier Resonant Tunneling Diode (RTD) over 21 bias points using Resonant Tunneling Diode Simulation with NEGF. Several powerful features of this tool are demonstrated, including the following:

  • initial simulation with a Thomas-Fermi potential
  • plotting the conduction band with resonances and Fermi level
  • sweeping the conduction band plot across applied bias points, observing the changes in conduction band and Fermi level and new resonances as voltage increases
  • sweeping plot of transmission coefficient vs. energy across applied voltages
  • plotting I-V curve
  • running another simulation with a Hartree potential
  • plotting spatial profile of charge density and doping density along the device
  • sweeping the charge density plot across applied voltages and showing how the charge density changes as bias increases, for both potential models (Thomas-Fermi and Hartree)
  • juxtaposition of I-V curves for both potential models
  • running another simulation with a Hartree potential and increasing the width of one barrier
  • adding the I-V curve for the wider barrier simulation to the previous I-V curves

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Tags, a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.