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MOSFet Demonstration: MOSFET Device Simulation and Analysis

By Gerhard Klimeck1, Benjamin P Haley2

1. Electrical and Computer Engineering, Purdue University, West Lafayette, IN 2. Purdue University

Category

Animations

Published on

Abstract

This video shows the simulation and analysis of a MOSFET device using the MOSFet tool. Several powerful analytic features of this tool are demonstrated, including the following:

  • calculation of Id-Vg curves
  • potential contour plots along the device at equilibrium and at the final applied bias
  • electron density contour plots along the device at equilibrium and at the final applied bias
  • spatial doping profile along the device
  • 1D spatial potential profile along the device

Sponsored by

NCN@Purdue

Cite this work

Researchers should cite this work as follows:

  • Gerhard Klimeck; Benjamin P Haley (2009), "MOSFet Demonstration: MOSFET Device Simulation and Analysis," http://nanohub.org/resources/6830.

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