MOSFet Demonstration: MOSFET Device Simulation and Analysis
Recommendations
- MOSCap Demonstration: MOS Capacitor Simulation
- PN Junction Lab Demonstration: Asymmetric PN Junctions
- Band Structure Lab Demonstration: Bulk Strain
- RTD with NEGF Demonstration: Basic RTD Asymmetric
- OMEN Nanowire Demonstration: Nanowire Simulation and Analysis
- Crystal Viewer Demonstration: Bravais Lattices 2
- Quantum Dot Lab Demonstration: Pyramidal Qdots
Category
Published on
Abstract
This video shows the simulation and analysis of a MOSFET device using the MOSFet tool. Several powerful analytic features of this tool are demonstrated, including the following:
- calculation of Id-Vg curves
- potential contour plots along the device at equilibrium and at the final applied bias
- electron density contour plots along the device at equilibrium and at the final applied bias
- spatial doping profile along the device
- 1D spatial potential profile along the device
Sponsored by
NCN@Purdue
Cite this work
Researchers should cite this work as follows:
-
Gerhard Klimeck; Benjamin P Haley (2009), "MOSFet Demonstration: MOSFET Device Simulation and Analysis," https://nanohub.org/resources/6830.