This video shows the simulation and analysis of a several PN junctions using PN Junction Lab, which is powered by PADRE. Several powerful analytic features of this tool are demonstrated, including the following:

• spatial profiles of the equilibrium energy bands and doping levels along the device length
• spatial profiles along the device length of quantities which are shown to vary as the applied bias changes including energy bands, electric field, and net charge density
• changing the N-type doping and running new simulations
• comparing output results from separate simulations with different N-type doping levels including energy bands, electric field, and net charge density. The asymmetric doping can be seen to result in an asymmetric built-in field, bandedge profile, and charge distribution.

Researchers should cite this work as follows:

• Gerhard Klimeck; Benjamin P Haley (2009), "PN Junction Lab Demonstration: Asymmetric PN Junctions ," http://nanohub.org/resources/6842.

  BibTex | EndNote

1. ABACUS
2. ACUTE
3. devices
4. microelectronics
5. nanoelectronics
6. pn-junction
7. PN Junction Lab
8. tool demonstration
9. transport/Drift-Diffusion