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PN Junction Lab Demonstration: Asymmetric PN Junctions

By Gerhard Klimeck1, Benjamin P Haley2

1. Electrical and Computer Engineering, Purdue University, West Lafayette, IN 2. Purdue University



Published on


This video shows the simulation and analysis of a several PN junctions using PN Junction Lab, which is powered by PADRE. Several powerful analytic features of this tool are demonstrated, including the following:

  • spatial profiles of the equilibrium energy bands and doping levels along the device length
  • spatial profiles along the device length of quantities which are shown to vary as the applied bias changes including energy bands, electric field, and net charge density
  • changing the N-type doping and running new simulations
  • comparing output results from separate simulations with different N-type doping levels including energy bands, electric field, and net charge density. The asymmetric doping can be seen to result in an asymmetric built-in field, bandedge profile, and charge distribution.

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Tags, a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.