PN Junction Lab Demonstration: Asymmetric PN Junctions

By Gerhard Klimeck1, Benjamin P Haley2

1. Electrical and Computer Engineering, Purdue University, West Lafayette, IN 2. Purdue University

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Animations

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Abstract

This video shows the simulation and analysis of a several PN junctions using PN Junction Lab, which is powered by PADRE. Several powerful analytic features of this tool are demonstrated, including the following:

  • spatial profiles of the equilibrium energy bands and doping levels along the device length
  • spatial profiles along the device length of quantities which are shown to vary as the applied bias changes including energy bands, electric field, and net charge density
  • changing the N-type doping and running new simulations
  • comparing output results from separate simulations with different N-type doping levels including energy bands, electric field, and net charge density. The asymmetric doping can be seen to result in an asymmetric built-in field, bandedge profile, and charge distribution.

Sponsored by

NCN@Purdue

Cite this work

Researchers should cite this work as follows:

  • Gerhard Klimeck; Benjamin P Haley (2009), "PN Junction Lab Demonstration: Asymmetric PN Junctions ," http://nanohub.org/resources/6842.

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