Lecture 10: Interface Damage & Negative Bias Temperature Instability
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Published on
Abstract
Outline:
- Background information
- NBTI interpreted by R-D model
- The act of measurement and observed quantity
- NBTI vs. Light-induced Degradation
- Possibility of Degradation-free Transistors
- Conclusions
Cite this work
Researchers should cite this work as follows:
-
Muhammad A. Alam (2010), "Lecture 10: Interface Damage & Negative Bias Temperature Instability," https://nanohub.org/resources/7178.
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Location
Beering Hall, Room 2280, Purdue University, West Lafayette, IN