MOSFet Development Group
This resource belongs to the MOSFet Development Group group.
In this exercise studentsare required to simulate long channel device for which the graduate channel approximation is valid and the short channel device for which velocity saturation effect starts to play significant role.
Researchers should cite this work as follows:
Dragica Vasileska (2009), "Exercise for MOSFET Lab: Long Channel vs. Short Channel Device," https://nanohub.org/resources/7188.