Process Variation: An Evalution of Carbon Nanotube Transistor Field Effect Transistors

By Sergio Urban1, Alvin Lacson2, Louis Bonhami3

1. University of Texas at El Paso 2. California Polytechnic State University, San Luis Obispo, CA 3. Alabama A&M University

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Faculty Advisor(s): Janes, Roy, Sands

Process variation is the observed deviation of device parameters in mass production processes. As the critical dimensions of today's MOSFET's are continously decreasing, process variation is becoming an increased problem. Therefore, alternatives to current MOSFET technology such as carbon nanotube field effect transistors (CNTFETS)are being investigated. Although we are currently unable to mass produce carbon nanotubes because of lack of understanding of the growth process, statistical methods and analysis of experimental data were employed to investigate the subject of process variation in relation to CNTFET technology. This work is primarily theoritical and relies heavily on the use of accurate device models and statistical computer simulations. The end result is a comparison between CNTFET variation and future MOSFET variation.

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Researchers should cite this work as follows:

  • Sergio Urban, Alvin Lacson, Louis Bonhami (2004), "Process Variation: An Evalution of Carbon Nanotube Transistor Field Effect Transistors,"

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