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Nanostrutured Optoelectronics Toolbox

By Alexander S McLeod1, Ian Rousseau2

1. University of California - Berkeley 2. Massachusetts Institute of Technology (MIT)

Examine charge and exciton transport in nanostructured optoelectonic devices

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Archive Version 1.0
Published on 16 Aug 2010
Latest version: 1.0.4. All versions

doi:10.4231/D3BG2H93H cite this

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Abstract

Organic semiconductors, metal oxides, and nanomaterials hold promise as the future basis for efficient, cost-effective, large scale optoelectronic devices. This tool computes the transient and steady-state charge and exciton distributions in devices composed of a sequence of planar, distinct layers of semiconductor and nanostructured materials.

The model utilizes a rate equation formalism based upon the idea of hopping across a one-dimensional chain of atoms and molecules. In the limit of low field and a narrow, the model is equivalent to the drift-diffusion equations. The advantage of the rate equation formalism lies in its generalizability; various injection models, Foerster resonant energy transfer, interfacial recombination, and tunneling can be studied within this framework.

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