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Nanostructured Optoelectronics Toolbox

By Ian Michael Rousseau1, Jeffrey C Grossman1, Vladimir Bulovic1, Polina Anikeeva2

1. Massachusetts Institute of Technology 2. Massachusetts Institute of Technology (MIT)

Examine charge and exciton transport in nanostructured optoelectonic devices

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Archive Version 1.0.3
Published on 05 Dec 2011
Latest version: 1.0.4. All versions

doi:10.4231/D3JM23F5J cite this

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Abstract

Organic semiconductors, metal oxides, and nanomaterials hold promise as the future basis for efficient, cost-effective, large scale optoelectronic devices. This tool computes the transient and steady-state charge and exciton distributions in devices composed of a sequence of planar, distinct layers of semiconductor and nanostructured materials.

The model utilizes a rate equation formalism based upon the idea of hopping across a one-dimensional chain of atoms and molecules. In the limit of low field and a narrow, the model is equivalent to the drift-diffusion equations. The advantage of the rate equation formalism lies in its generalizability; various injection models, Foerster resonant energy transfer, interfacial recombination, and tunneling can be studied within this framework.

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