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Nanostructured Optoelectronics Toolbox

By Ian Michael Rousseau1, Jeffrey C Grossman1, Vladimir Bulovic1, Polina Anikeeva2

1. Massachusetts Institute of Technology 2. Massachusetts Institute of Technology (MIT)

Examine charge and exciton transport in nanostructured optoelectonic devices

Launch Tool

This tool version is unpublished and cannot be run. If you would like to have this version staged, you can put a request through HUB Support.

Archive Version 1.0.3
Published on 05 Dec 2011
Latest version: 1.0.4. All versions

doi:10.4231/D3JM23F5J cite this

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Organic semiconductors, metal oxides, and nanomaterials hold promise as the future basis for efficient, cost-effective, large scale optoelectronic devices. This tool computes the transient and steady-state charge and exciton distributions in devices composed of a sequence of planar, distinct layers of semiconductor and nanostructured materials.

The model utilizes a rate equation formalism based upon the idea of hopping across a one-dimensional chain of atoms and molecules. In the limit of low field and a narrow, the model is equivalent to the drift-diffusion equations. The advantage of the rate equation formalism lies in its generalizability; various injection models, Foerster resonant energy transfer, interfacial recombination, and tunneling can be studied within this framework.

Tags, a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.