Illinois ECE 440 Solid State Electronic Devices, Lecture 16-17: Diffusion

By Eric Pop

Stanford University

Published on

Abstract

So far:
• Energy bands, Doping, Fermi levels
• Drift (~n*v), diffusion (~dn/dx)
• Einstein relationship (D/μ = kT/q)
• “Boring” semiconductor resistors (either n- or p-type)
• Majority/minority carriers with illumination

Today, our first “useful” device:
• The P-N junction diode in equilibrium (external V=0)
• Remember, in equilibrium Fermi level must be flat

Credits

University of Illinois at Urbana-Champaign ECE 440: Solid State Electronic Devices

Cite this work

Researchers should cite this work as follows:

  • Eric Pop (2009), "Illinois ECE 440 Solid State Electronic Devices, Lecture 16-17: Diffusion," http://nanohub.org/resources/7605.

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