On the Resolution of Ultra-fast NBTI Measurements and Reaction-Diffusion Theory

By Ahmad Ehteshamul Islam1, Souvik Mahapatra2, Muhammad A. Alam3

1. Air Force Research Laboratory 2. Indian Institute of Technology Bombay 3. Purdue University

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Reaction-Diffusion (R-D) theory, well-known to successfully explain most features of NBTI stress, is perceived to fail in explaining NBTI recovery. Several efforts have been made to understand differences between NBTI relaxation measured using ultra-fast methods and that predicted by R-D theory. Many alternative theories have also been proposed to explain ultra-fast NBTI relaxation, although their ability in predicting features of NBTI stress remains questionable. In this work, a hole-trap/interface-trap (NHT/NIT) separation framework is used to demonstrate that NIT relaxes slower compared to overall NBTI and this NIT relaxation is consistent with R-D theory. The framework also explains, perhaps for the first time, the observed impacts of nitrogen, stress-time, temperature, frequency, duty cycle, etc. on NBTI degradation. In sum, together with NHT, the R-D model governing NIT is shown to explain NBTI stress and recovery features in nitrided gate oxide p-MOSFETs.


Experiment: Shweta Deora & Vrajesh D. Maheta of IIT-Bombay
Characterization: Birck Nanotechnology Center
Computational Support: Network for Computational Nanotechnology

Sponsored by

CEN, IIT-Bombay
MCIT, Govt. of India


A. E. Islam, S. Mahapatra, S. Deora, V. D. Maheta, and M. A. Alam, "On The Differences Between Ultra-fast NBTI Experiments and Reaction-Diffusion Theory," International Electron Devices Meeting (IEDM) 2009, pp 733.

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Researchers should cite this work as follows:

  • Ahmad Ehteshamul Islam; Souvik Mahapatra; Muhammad A. Alam (2009), "On the Resolution of Ultra-fast NBTI Measurements and Reaction-Diffusion Theory," http://nanohub.org/resources/8023.

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