Using the spin of an electron in addition to, or instead of, the charge properties is believed to have many benefits in terms of speed, power-cost, and integration density over conventional electronic circuits. At the heart of the field of spintronics has been a proposed spin-analog of the electronic transistor, the spin field effect transistor. Koo, et al [1,2] demonstrate the injection and detection of spin between two ferromagnetic contacts and show how the magnitude of the spin-current between the source and drain contacts can be controlled by a voltge applied to a gate. The results present an experimental realization of the concepts described for the spin-transistor.
This presentation was preceeded by a short introductory tutorial by Prof. Supriyo Datta, "The Elusive Spin Transistor."
Network for Computational Nanotechnology (NCN)
NNSA Center for Prediction of Reliability, Integrity and Survivability of Microsystems (PRISM)
Purdue Discovery Park
Birck Nanotechnology Center
Purdue University Discovery Park
- Koo, et. al., Transistors Switch onto Spin, Science, Vol. 325. no. 5947, p. 1471 (September 2009).
- Hyun Cheol Koo, Jae Hyun Kwon, Jonghwa Eom, Joonyeon Chang, Suk Hee Han, Mark Johnson, Control of Spin Precession in a Spin-Injected Field Effect Transistor, Science, Vol. 325. 5947, pp. 1515 - 1518 (September 2009).
Researchers should cite this work as follows:
Birck Nanotechnology Building, Room 1001