Using the spin of an electron in addition to, or instead of, the charge properties is believed to have many benefits in terms of speed, power-cost, and integration density over conventional electronic circuits. At the heart of the field of spintronics has been a proposed spin-analog of the electronic transistor, the spin field effect transistor. Koo, et al [1,2] demonstrate the injection and detection of spin between two ferromagnetic contacts and show how the magnitude of the spin-current between the source and drain contacts can be controlled by a voltge applied to a gate. The results present an experimental realization of the concepts described for the spin-transistor.
This presentation was preceeded by a short introductory tutorial by Prof. Supriyo Datta, "The Elusive Spin Transistor."
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- Koo, et. al., Transistors Switch onto Spin, Science, Vol. 325. no. 5947, p. 1471 (September 2009).
- Hyun Cheol Koo, Jae Hyun Kwon, Jonghwa Eom, Joonyeon Chang, Suk Hee Han, Mark Johnson, Control of Spin Precession in a Spin-Injected Field Effect Transistor, Science, Vol. 325. 5947, pp. 1515 - 1518 (September 2009).
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