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Control of Spin Precession in a Datta-Das Transistor Structure

By Hyun Cheol Koo

The Korea Institute of Science

Published on

Abstract

Transistors Switch onto Spin

spin fet transistor Using the spin of an electron in addition to, or instead of, the charge properties is believed to have many benefits in terms of speed, power-cost, and integration density over conventional electronic circuits. At the heart of the field of spintronics has been a proposed spin-analog of the electronic transistor, the spin field effect transistor. Koo, et al [1,2] demonstrate the injection and detection of spin between two ferromagnetic contacts and show how the magnitude of the spin-current between the source and drain contacts can be controlled by a voltge applied to a gate. The results present an experimental realization of the concepts described for the spin-transistor.

This presentation was preceeded by a short introductory tutorial by Prof. Supriyo Datta, "The Elusive Spin Transistor."

Bio

Hyun Cheol Koo Dr. Koo has been a Senior Researcher of the Nano Device Research Center at The Korea Institute of Science and Technology (KIST) since 2004. He focuses on spin electronics device, which is voltage controlled spin device. Spin-FET is main concern of his research project and he try to realize the world first spin transport transistor operated by external electric field. His other research topic is to develop spin Hall devices. All of devices are fabricated by nano technology such as electron beam lithography. He is also interested in Magnetic Random Access Memory (MRAM) and Magnetic imaging using Magnetic Force Microscopy (MFM). He has published many SCI registered papers and has presented his results at prestigious international conferences.

Credits

In conjunction with Dr. Joonyeon Chang, Center for Spintronics Research, Korean Institute of Science and Technology.

Sponsored by

References

  1. Koo, et. al., Transistors Switch onto Spin, Science, Vol. 325. no. 5947, p. 1471 (September 2009).
  2. Hyun Cheol Koo, Jae Hyun Kwon, Jonghwa Eom, Joonyeon Chang, Suk Hee Han, Mark Johnson, Control of Spin Precession in a Spin-Injected Field Effect Transistor, Science, Vol. 325. 5947, pp. 1515 - 1518 (September 2009).

Cite this work

Researchers should cite this work as follows:

  • Hyun Cheol Koo (2011), "Control of Spin Precession in a Datta-Das Transistor Structure," http://nanohub.org/resources/8057.

    BibTex | EndNote

Time

Location

Birck Nanotechnology Building, Room 1001

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