Today’s devices show spatial material and potential variations on the nanometer scale in all three dimensions. Devices are no longer “simply” planar but show 3D spatial variations with stress and strain designed to be additional material tuning parameters. The number of atoms in the critical device dimensions become countable and novel materials are introduced into the standard Si device process.
Fundamental device modeling on the nanometer scale must include effect of open systems, high bias, and an atomistic basis. The non-equilibrium Green Function Formalism (NEGF) can include all these components in a fundamentally sound approach and has been the basis for a few novel device simulation tools.
Model implementations must be closely validated against experimental data, scale to realistically large devices, be predictive, deliver physical insight, computationally efficient / stable, and be taught to the next generation of device engineers.
Researchers should cite this work as follows:
Università di Pisa, Pisa, Italy