NEMO1D demonstrated the first industrial strength implementation of NEGF into a simulator that quantitatively simulated resonant tunneling diodes. The development of efficient algorithms that simulate scattering from polar optical phonons, acoustic phonons, alloy disorder, and interface roughness were critical in testing the theory towards its general capability to deliver quantitative matches to experimental data for low temperature devices. That quantitative agreement at low temperature devices and disagreement at room temperature led to a significant conclusion on the importance of full bandstructure models for devices which have material and potential variations on the order of 5nm.
This presentation oveviews the computational flow of the various scattering models implemented in NEMO1D: single sequential scattering, multiple sequential scattering, multiple sequential scattering at coupled energies, and self-consistent first Born approximations. For the derivations of the equations and further detail I just refer here to the Journal of Applied Physics publication in 1997 . This presentation is NOT intended to teach anyone NEGF. It is merely a computational flow overview. For true NEGF teaching material I refer to Datta’s NEGF topic page on nanoHUB Learning Objectives:
- Understand the general concept of sequential scattering, multiple sequential scattering, and self-consistent first Born approximation
- Appreciate the complexity of of the the flow of computational objects in a large scale simulation engine
- Roger Lake, Gerhard Klimeck, R. Chris Bowen and Dejan Jovanovic, "Single and multiband modeling of quantum electron transport through layered semiconductor devices", J. of Appl. Phys. 81, 7845 (1997).
- Supriyo Datta maintains an excellent web page on nanoHUB.org which contains tutorials, On-Line seminars, Ph.D. theses, and tool examples.
Researchers should cite this work as follows:
Università di Pisa, Pisa, Italy