Support Options

Submit a Support Ticket

Home Groups ABACUS - Assembly of Basic Applications for Coordinated Understanding of Semiconductors Development Group Resources Teaching Materials Quantum Tunneling Exercise About

Quantum Tunneling Exercise

By Gerhard Klimeck1, Parijat Sengupta1, Dragica Vasileska2

1. Purdue University 2. Arizona State University

Download (PDF)

Licensed according to this deed.

Published on


Exercise Background

Tunneling is fully quantum-mechanical effect that does not have classical analog. Tunneling has revolutionized surface science by its utilization in scanning tunneling microscopes. In some device applications tunneling is required for the operation of the device (Resonant tunneling diodes, EEPROMs � floating gate memories), but in some cases it leads to unwanted power dissipation, such as gate leakage in both MOS and Schottky transistors.

Exercise Objectives

The objective of this exercise is to:

1. Calculate analytically the tunneling coefficient for a single barrier.

2. Verify the analytical results obtained by simulating a potential barrier using the Piece-
Wise-Constant Potential Barrier Tool (PCPBT).

Cite this work

Researchers should cite this work as follows:

  • Gerhard Klimeck; Parijat Sengupta; Dragica Vasileska (2010), "Quantum Tunneling Exercise,"

    BibTex | EndNote

Tags, a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.