Support

Support Options

Submit a Support Ticket

 

Analytical and Numerical Solution of the Double Barrier Problem

By Gerhard Klimeck1, Parijat Sengupta1, Dragica Vasileska2

1. Purdue University 2. Arizona State University

Download (PDF)

Licensed according to this deed.

Published on

Abstract

Tunneling is fully quantum-mechanical effect that does not have classical analog. Tunneling has revolutionized surface science by its utilization in scanning tunneling microscopes. In some device applications tunneling is required for the operation of the device (Resonant tunneling diodes, EEPROMs – floating gate memories), but in some cases it leads to unwanted power dissipation, such as gate leakage in both MOS and Schottky transistors. Resonant tunneling diodes, due to the tunneling current at small biases exhibit negative differential resistance region and, thus, are suitable for oscillators. Because of this, it is very important to understand tunneling in double-barrier structure.

Cite this work

Researchers should cite this work as follows:

  • Gerhard Klimeck; Parijat Sengupta; Dragica Vasileska (2010), "Analytical and Numerical Solution of the Double Barrier Problem," http://nanohub.org/resources/9231.

    BibTex | EndNote

Tags

No classroom usage data was found. You may need to enable JavaScript to view this data.

nanoHUB.org, a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.