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This presentation demonstrates the importance of long-range strain in quantum dots
- Numerical analysis of the importance of the buffer around the central quantum dot - local band edges – vertical and horizontal extension of the buffer
- Controlled overgrowth can tune the electron energies in the system
- Strain is the source of the creation of the InAs QDs on GaAs
- Strain is a long range phenomenon
- Strain reaches further vertically than horizontally
- Quantum dots will grow on top of each other
- Electron wavefunctions are confined to the central quantum dots and can be computed in a smaller domain
Researchers should cite this work as follows:
Gerhard Klimeck (2010), "Nanoelectronic Modeling Lecture 31a: Long-Range Strain in InGaAs Quantum Dots," https://nanohub.org/resources/9270.
Università di Pisa, Pisa, Italy