This presentation demonstrates the importance of long-range strain in quantum dots
- Numerical analysis of the importance of the buffer around the central quantum dot - local band edges – vertical and horizontal extension of the buffer
- Controlled overgrowth can tune the electron energies in the system
Learning Objectives:
- Strain is the source of the creation of the InAs QDs on GaAs
- Strain is a long range phenomenon
- Strain reaches further vertically than horizontally
- Quantum dots will grow on top of each other
- Electron wavefunctions are confined to the central quantum dots and can be computed in a smaller domain
Researchers should cite this work as follows: