This presentation discusses the motivation for band-to-band tunneling transistors to lower the power requirements of the next generation transistors. The capabilities of OMEN to model such complex devices on an atomistic representation is demonstrated.

Learning Objectives:

1. Band-To-Band Tunneling Transistors may be “better” than a superscaled MOSFET because:
1. The subthreshold swing is possibly smaller than the ideal 60mV/dec in the best case MOSFET – i.e the device turns off with a smaller voltage swing
1. Power reduction during the switching operation
2. The devices may be operated at voltages of around 0.2 volts rather than 0.9 volts
1. Power reduction
2. Gate-all-around BTBT nanowires appear to offer the best gate control and the best SS

Researchers should cite this work as follows:

• Gerhard Klimeck; Mathieu Luisier (2010), "Nanoelectronic Modeling Lecture 39: OMEN: Band-to-Band-Tunneling Transistors," https://nanohub.org/resources/9282.

1. BTBT
2. course lecture
3. devices
4. modeling
5. nanoelectronics
6. NEMO
7. OMEN
8. Simulation