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This presentation discusses the motivation for band-to-band tunneling transistors to lower the power requirements of the next generation transistors. The capabilities of OMEN to model such complex devices on an atomistic representation is demonstrated.
- Band-To-Band Tunneling Transistors may be “better” than a superscaled MOSFET because:
- The subthreshold swing is possibly smaller than the ideal 60mV/dec in the best case MOSFET – i.e the device turns off with a smaller voltage swing
- Power reduction during the switching operation
- The devices may be operated at voltages of around 0.2 volts rather than 0.9 volts
- Power reduction
- Gate-all-around BTBT nanowires appear to offer the best gate control and the best SS
Researchers should cite this work as follows:
Gerhard Klimeck; Mathieu Luisier (2010), "Nanoelectronic Modeling Lecture 39: OMEN: Band-to-Band-Tunneling Transistors," https://nanohub.org/resources/9282.
Università di Pisa, Pisa, Italy