Nanoelectronic Modeling Lecture 40: Performance Limitations of Graphene Nanoribbon Tunneling FETS due to Line Edge Roughness

By Gerhard Klimeck1, Mathieu Luisier1

1. Electrical and Computer Engineering, Purdue University, West Lafayette, IN

Published on

Abstract

This presentation the effects of line edge roughness on graphene nano ribbon (GNR) transitors..

Learning Objectives:

  1. GNR TFET Simulation
    1. pz Tight-Binding Orbital Model
    2. 3D Schrödinger-Poisson Solver
  2. Device Simulation
    1. Structure Optimization (Doping, Lg, VDD)
    2. LER => Localized Band Gap States
    3. LER => Performance Deterioration
  3. Outlook and Challenges
    1. Ripples Scattering
    2. More Accurate Bandstructure Model
    3. Dissipative Scattering (Electron-Phonon)

Cite this work

Researchers should cite this work as follows:

  • Gerhard Klimeck; Mathieu Luisier (2010), "Nanoelectronic Modeling Lecture 40: Performance Limitations of Graphene Nanoribbon Tunneling FETS due to Line Edge Roughness," http://nanohub.org/resources/9283.

    BibTex | EndNote

Time

Location

Università di Pisa, Pisa, Italy

Tags

  1. nanoelectronics
  2. NEMO
  3. course lecture
  4. grapheme nanoribbon
  5. MOSFET
  6. TFET
  7. tight-binding
  8. devices
  9. Simulation
  10. modeling
  11. Optimization
  12. band gap
  13. line edge roughness