Nanoelectronic Modeling Lecture 41: Full-Band and Atomistic Simulation of Realistic 40nm InAs HEMT
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This presentation demonstrates the OMEN capabilities to perform a multi-scale simulation of advanced InAs-based high mobility transistors.
- Quantum Transport Simulator
- Full-Band and Atomistic
- III-V HEMTs
- Performance Analysis
- Good Agreement with Experiment
- Some Open Issues
- Improve Models (Contact)
- Investigate Scaling of Gate Length
Researchers should cite this work as follows:
Gerhard Klimeck; Neerav Kharche; Neophytos Neophytou; Mathieu Luisier (2010), "Nanoelectronic Modeling Lecture 41: Full-Band and Atomistic Simulation of Realistic 40nm InAs HEMT," https://nanohub.org/resources/9285.
Università di Pisa, Pisa, Italy