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Nanoelectronic Modeling Lecture 41: Full-Band and Atomistic Simulation of Realistic 40nm InAs HEMT

By Gerhard Klimeck1, Neerav Kharche1, Neophytos Neophytou2, Mathieu Luisier1

1. Electrical and Computer Engineering, Purdue University, West Lafayette, IN 2. Technical University of Vienna, Austria

Published on

Abstract

This presentation demonstrates the OMEN capabilities to perform a multi-scale simulation of advanced InAs-based high mobility transistors.

Learning Objectives:

  1. Quantum Transport Simulator
    1. Full-Band and Atomistic
    2. III-V HEMTs
  2. Performance Analysis
    1. Good Agreement with Experiment
    2. Some Open Issues
  3. Outlook
    1. Improve Models (Contact)
    2. Investigate Scaling of Gate Length
    3. Scattering?

Cite this work

Researchers should cite this work as follows:

  • Gerhard Klimeck; Neerav Kharche; Neophytos Neophytou; Mathieu Luisier (2010), "Nanoelectronic Modeling Lecture 41: Full-Band and Atomistic Simulation of Realistic 40nm InAs HEMT," http://nanohub.org/resources/9285.

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Time

Location

Università di Pisa, Pisa, Italy

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