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You are here: HomeResourcesOnline PresentationsLecture 1b: Nanotransistors - A Bottom Up ViewAbout

Lecture 1b: Nanotransistors - A Bottom Up View

By Mark Lundstrom

Electrical and Computer Engineering, Purdue University, West Lafayette, IN

Category Online Presentations
Abstract MOSFET scaling continues to take transistors to smaller and smaller dimensions. Today, the MOSFET is a true nanoelectronic device – one of enormous importance for computing, data storage, and for communications. In this lecture, I will present a simple, physical model for the nanoscale MOSFET using the ideas and approach introduced in Prof. Datta’s first lecture. Surprisingly, we will find that the smaller MOSFETs become, the easier they are to understand. The first part of the lecture will develop the model starting from Prof. Supriyo Datta’s general model for a nanodevice. In the second part, we will do the same thing using more traditional approaches from semiconductor electronics. Hopefully this approach will help students understand how the “bottom up” and “top down” approaches relate. This lecture will also provide an entry point into a more extensive tutorial on nanotransistors that is available online as the short course Physics of Nanoscale MOSFETs.
Sponsored by

NCN@Purdue Summer School 2010
National Science Fondation
Intel Corporation

Cite this work

Researchers should cite this work as follows:

  • Mark Lundstrom (2010), "Lecture 1b: Nanotransistors - A Bottom Up View," http://nanohub.org/resources/9344.

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Time 10:30 AM, July 12, 2010
Location Purdue University, West Lafayette, IN
Tags
  1. ballistic MOSFET
  2. BJT
  3. course lecture
  4. devices
  5. fermienergy
  6. fermi level
  7. Maxwell Boltzmann statistics
  8. MOSFET
  9. nanoelectronic, summerschool
  10. nano MOSFET
  11. quantum transport
  12. Transistor

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