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Padre
2D/3D devices under steady state, transient conditions or AC small-signal analysis
Version 1.3 - published on 27 Oct 2009
DOI: 10254/nanohub-r941.4 cite this
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| Abstract | PADRE is a 2D/3D simulator for electronic devices, such as MOSFET transistors. It can simulate physical structures of arbitrary geometry--including heterostructures--with arbitrary doping profiles, which can be obtained using analytical functions or directly from multidimensional process simulators such as Prophet.
For each electrical bias, PADRE solves a coupled set of partial differential equations (PDEs). A variety of PDE systems are supported which form a hierarchy of accuracy:
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| Credits | PADRE was developed at Bell Labs by Mark Pinto, R. Kent Smith, and Ashraful Alam. Additional developments were made in collaboration by the following:
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| Cite this work | Researchers should cite this work as follows: |
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