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Padre

2D/3D devices under steady state, transient conditions or AC small-signal analysis

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Archive Version 1.1
Published on 08 Nov 2007, unpublished on 06 May 2008
Latest version: 1.4. All versions

doi:10.4231/D3W37KV42 cite this

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Abstract

PADRE is a 2D/3D simulator for electronic devices, such as MOSFET transistors. It can simulate physical structures of arbitrary geometry--including heterostructures--with arbitrary doping profiles, which can be obtained using analytical functions or directly from multidimensional process simulators such as Prophet.

For each electrical bias, PADRE solves a coupled set of partial differential equations (PDEs). A variety of PDE systems are supported which form a hierarchy of accuracy:

  • electrostatic (Poisson equation)
  • drift-diffusion (including carrier continuity equations)
  • energy balance (including carrier temperature)
  • electrothermal (including lattice heating)

A variety of supplemental documents are available that deal with the PADRE software and TCAD simulation:

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