Dr. Shen received his B.S. and M.S. degrees in electrical engineering at the National Taiwan University in 1993 and 1995, respectively. He earned his Ph.D. in electrical engineering at the University of Illinois at Urbana-Champaign in 2001. During his graduate study at the University of Illinois, he was involved in the development and of low-voltage RF MEMS switches and ion-implanted GaAs MESFETs using e-beam direct gate-writing photolithography techniques.
After completing his Ph.D., Shen joined Xindium Technologies Inc. as a senior processing engineer in June 2001. He developed proprietary high-performance InP SHBT technology for 40 Gb/s monolithically integrated optical receivers and InP-based power HBT technology for wireless communications. In August 2004, he joined the HSIC group at the University of Illinois at Urbana-Champaign as a postdoctoral research associate to work on exciting research projects.
In January 2005, he joined the School of Electrical and Computer Engineering at the Georgia Institute of Technology in Atlanta, Georgia, where he is currently an assistant professor. His current research fields include high-sensitivity III-N avalanche photodiodes (APD), InGaN lasers, III-N heterojunction field effect transistors (HFET), and high-power III-N heterojunction bipolar transistor(HBT)
Dr. Shen is a senior member of IEEE and holds 7 awarded US patents in MEMS and microelectronics areas.
Cite this work
Researchers should cite this work as follows:
Micro and Nanotechnology Lab, University of Illinois, Urbana, IL
University of Illinois at Urbana-Champaign
- HBT OEIC