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2D/3D devices under steady state, transient conditions or AC small-signal analysis

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Archive Version 1.0
Published on 29 Mar 2005, unpublished on 08 Nov 2007
Latest version: 1.5. All versions

doi:10.4231/D30V89G94 cite this

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PADRE is a 2D/3D simulator for electronic devices, such as MOSFET transistors. It can simulate physical structures of arbitrary geometry--including heterostructures--with arbitrary doping profiles, which can be obtained using analytical functions or directly from multidimensional process simulators such as Prophet.

For each electrical bias, PADRE solves a coupled set of partial differential equations (PDEs). A variety of PDE systems are supported which form a hierarchy of accuracy:

  • electrostatic (Poisson equation)
  • drift-diffusion (including carrier continuity equations)
  • energy balance (including carrier temperature)
  • electrothermal (including lattice heating)

A variety of supplemental documents are available that deal with the PADRE software and TCAD simulation:


PADRE was developed at Bell Labs by Mark Pinto, R. Kent Smith, and Ashraful Alam.

Cite this work

Researchers should cite this work as follows:

  • (2014), "Padre," (DOI: 10.4231/D30V89G94).

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Tags, a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.