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Carrier Statistics - Temperature Effects

By Saumitra Raj Mehrotra1, Dragica Vasileska2, Gerhard Klimeck1

1. Purdue University 2. Arizona State University

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Abstract

Silicon (Si), Germanium (Ge) and Gallium-Arsenide (GaAs) are commonly used materials for MOS Field Effect Transistor (MOSFET) fabrication. MOSFET structures are commonly doped to achieve the desired switching operation and doping is a critical parameter in MOSFET designing.
The goal in this test is to calculate the temperature range of device operation using Si,Ge and GaAs materials.

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Researchers should cite this work as follows:

  • Saumitra Raj Mehrotra; Dragica Vasileska; Gerhard Klimeck (2010), "Carrier Statistics - Temperature Effects," http://nanohub.org/resources/9498.

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