Silicon (Si), Germanium (Ge) and Gallium-Arsenide (GaAs) are commonly used materials for MOS Field Effect Transistor (MOSFET) fabrication. MOSFET structures are commonly doped to achieve the desired switching operation and doping is a critical parameter in MOSFET designing.
The goal in this test is to calculate the temperature range of device operation using Si,Ge and GaAs materials.
Researchers should cite this work as follows:
Saumitra Raj Mehrotra; Dragica Vasileska; Gerhard Klimeck (2010), "Carrier Statistics - Temperature Effects," http://nanohub.org/resources/9498.