Silicon (Si), Germanium (Ge) and Gallium-Arsenide (GaAs) are commonly used materials for MOS Field Effect Transistor (MOSFET) fabrication. MOSFET structures are commonly doped to achieve the desired switching operation and doping is a critical parameter in MOSFET designing.
The goal in this test is to calculate the temperature range of device operation using Si,Ge and GaAs materials.
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