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Drift-Diffusion Lab results are verified analytically. In the first test minority carrier concentration is computed in a semiconductor slab with constant carrier Generation rate (/cm3.s). In the second test bias is applied across a semiconductor slab and current is computed both analytically and numerically.
Researchers should cite this work as follows:
Saumitra Raj Mehrotra; Dragica Vasileska; Gerhard Klimeck (2010), "Verification of the Validity of the Drift-Diffusion Lab Tool ," https://nanohub.org/resources/9509.