Anisotropic magnetoresistance in colossal magnetoresistive La1-xSrxMnO3 thin films
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We report on magnetic field and temperature dependent measurements of the anisotropic magnetoresistance (AMR) in epitaxial La1-xSrxMnO3 (LSMO) thin flms. While in 3d ferromagnetic alloys increasing the magnetization, either by reducing the temperature or increasing the magnetic field, increases the AMR, we find that in LSMO films the AMR dependence on magnetization displays non-monotonic behavior which becomes particularly pronounced in lightly doped compounds. We believe that this behavior is related to the inhomogeneity exhibited by these materials.
Department of Applied Physics, Yale University, New Haven, Connecticut 06520
W. Gao and E. Altman
Department of Chemical Engineering,
Yale University, New Haven, Connecticut 06520
Y. Bason, L. Klein
Department of Physics, Bar Ilan University, Ramat Gan 52900, Israel
M. Sidorov and Z. Krivokapic
Advanced Micro Devices, P.O. Box 3453, Sunnyvale, California 94088
Researchers should cite this work as follows:
Jeng-Bang (Tony) Yau (2010), "Anisotropic magnetoresistance in colossal magnetoresistive La1-xSrxMnO3 thin films," https://nanohub.org/resources/9611.