On Monday July 6th, the nanoHUB will be intermittently unavailable due to scheduled maintenance. All tool sessions will be shut down early in the morning. Home directories and tools will be unavailable most of the day. We apologize for any inconvenience this may cause. close


Support Options

Submit a Support Ticket


Anisotropic magnetoresistance in colossal magnetoresistive La1-xSrxMnO3 thin films

By Jeng-Bang (Tony) Yau




Published on


We report on magnetic field and temperature dependent measurements of the anisotropic magnetoresistance (AMR) in epitaxial La1-xSrxMnO3 (LSMO) thin flms. While in 3d ferromagnetic alloys increasing the magnetization, either by reducing the temperature or increasing the magnetic field, increases the AMR, we find that in LSMO films the AMR dependence on magnetization displays non-monotonic behavior which becomes particularly pronounced in lightly doped compounds. We believe that this behavior is related to the inhomogeneity exhibited by these materials.


Jeng-Bang Yau and X. Hong, A. Posadas, and C. H. Ahn
Department of Applied Physics, Yale University, New Haven, Connecticut 06520

W. Gao and E. Altman
Department of Chemical Engineering,
Yale University, New Haven, Connecticut 06520

Y. Bason, L. Klein
Department of Physics, Bar Ilan University, Ramat Gan 52900, Israel

M. Sidorov and Z. Krivokapic
Advanced Micro Devices, P.O. Box 3453, Sunnyvale, California 94088

Cite this work

Researchers should cite this work as follows:

  • Jeng-Bang (Tony) Yau (2010), "Anisotropic magnetoresistance in colossal magnetoresistive La1-xSrxMnO3 thin films," http://nanohub.org/resources/9611.

    BibTex | EndNote


nanoHUB.org, a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.