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You are here: ResourcesOnline PresentationsOptimization of Transistor Design for Carbon …About

Optimization of Transistor Design for Carbon Nanotubes

By Jing Guo

University of Florida

We have developed a self-consistent atomistic simulator for CNTFETs. Using the simulator, we show that a recently reported high-performance CNTFET delivers a near ballistic on-current. The off-state, however, is significantly degraded because the …

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Abstract We have developed a self-consistent atomistic simulator for CNTFETs. Using the simulator, we show that a recently reported high-performance CNTFET delivers a near ballistic on-current. The off-state, however, is significantly degraded because the CNTFET operates like a non-conventional Schottky barrier transistor. Design optimization for significantly improving the off-state is explored. We have also assessed how the CNTFET compares to the state-of-the-art Si MOSFET and the potential of CNTFETs for high-frequency applications.
Cite this work

Researchers should cite this work as follows:

  • Jing Guo (2006), "Optimization of Transistor Design for Carbon Nanotubes," http://nanohub.org/resources/970.

    BibTex | EndNote

Time January 20, 2006
Tags
  1. ballistic mosfet
  2. carbon nanotubes
  3. devices
  4. nanoelectronics
  5. nanotransistors
  6. research seminar

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