As the device size of the conventional planar metal oxide semiconductor field effect transistor
(MOSFET) shrinks into the deep sub micron regime, the device performance significantly degrades
mainly due to the short-channel effect. The silicon nanowire field-effect transistor (SNWFET) is
considered as an attractive alternative to the planar MOSFET, because its enhanced gate control
offers many advantages. In this work, the device characteristics of SNWFET have been investigated
by solving the three-dimensional (3D) Poisson equation and the quantum ballistic transport equation
self-consistently, and the dependence of the device performance on the gate number, configuration,
and shape has been examined in conjunction with the effect of the wave function confinement.
Numerical techniques to efficiently solve the 3D problem will be also addressed in this talk.
Daejeon, Korea. His research is on Nano-scale Quantum Device Simulations. From 1993 to 2002, he
was a Senior Researcher at the Electronics and Telecommunications Research Institute, Daejeon,
Korea. His main focus was on quantum transport in quantum wires, single electron transistors, etc.
He received his Ph.D. in Physics from Northwestern University in 1992. He received his B.S. in
Physics from Seoul National University in 1988.
Researchers should cite this work as follows:
Mincheol Shin (2006), "A 3D Quantum Simulation of Silicon Nanowire Field-Effect Transistors," https://nanohub.org/resources/983.