Notes on Fermi-Dirac Integrals (4th Edition)

23 Sep 2008 | Papers | Contributor(s): raseong kim, Xufeng Wang, Mark Lundstrom

Fermi-Dirac integrals appear frequently in semiconductor problems, so an understanding of their properties is essential. The purpose of these notes is to collect in one place, some basic information about Fermi-Dirac integrals and their properties.We also present Matlab functions (in a zipped...

Summary of current status of industrial nanocomposite developments

25 Jul 2008 | Papers | Contributor(s): Steven L. Masia

This is a brief summary of the current nanocomposites developed and provided by industry as of July 2008. A variety of industrial references are provided.

Modeling Quantum Transport in Nanoscale Transistors

30 Oct 2006 | Papers | Contributor(s): ramesh venugopal

As critical transistor dimensions scale below the 100 nm (nanoscale) regime, quan- tum mechanical effects begin to manifest themselves and affect important device performance metrics. Therefore, simulation tools which can be applied to design nanoscale transistors in the future, require new...

Nanoscale MOSFETs: Physics, Simulation and Design

26 Oct 2006 | Papers | Contributor(s): Zhibin Ren

This thesis discusses device physics, modeling and design issues of nanoscale transistors at the quantum level. The principle topics addressed in this report are 1) an implementation of appropriate physics and methodology in device modeling, 2) development of a new TCAD (technology computer aided...

Introduction to the Keldysh Nonequilibrium Green Function Technique

06 Oct 2006 | Papers | Contributor(s): A. P. Jauho

Keldysh nonequilibrium Green function technique is used very widely to describe transport phenomena in mesoscopic systems.The technique is somewhat subtle, and a rigorous treatment would require much more than we have at our disposal, see, for example, the text-bookk by Haug and Jauho [1].The...

Towards Multi-Scale Modeling of Carbon Nanotube Transistors

20 Sep 2006 | Papers | Contributor(s): Jing Guo, Supriyo Datta, Mark Lundstrom, M. P. Anantram

Multiscale simulation approaches are needed in order to address scientific and technological questions in the rapidly developing field of carbon nanotube electronics. In this paper, we describe an effort underway to develop a comprehensive capability for multiscale simulation of carbon nanotube...

Nanoscale Device Modeling: From MOSFETs to Molecules

20 Sep 2006 | Papers | Contributor(s): Prashant Subhash Damle

This thesis presents a rigorous yet practical approach to model quantum transport in nanoscale electronic devices.As convetional metal oxide semiconductor devices shrink below the one hundred nanometer regime, quantum mechanical effects are beginning to play an increasingly important role in...

Device Physics and Simulation of Silicon Nanowire Transistors

20 May 2006 | Papers | Contributor(s): Jing Wang

As the conventional silicon metal-oxide-semiconductor field-effect transistor (MOSFET) approaches its scaling limits, many novel device structures are being extensively explored. Among them, the silicon nanowire transistor (SNWT) has attracted broad attention from both the semiconductor industry...

Notes on the Ballistic MOSFET

08 Oct 2005 | Papers | Contributor(s): Mark Lundstrom

When analyzing semiconductor devices, the traditional approach is to assume that carriers scatter frequently from ionized impurities, phonons, surface roughness, etc. so that the average distance between scattering events (the so-called mean-free-path, λ) is much shorter than the device. When...

nanoMOS 2.0: A Two -Dimensional Simulator for Quantum Transport in Double-Gate MOSFETs

06 Oct 2006 | Papers | Contributor(s): Zhibin Ren, Ramesh Venugopal, Sebastien Goasguen, Supriyo Datta, Mark Lundstrom

A program to numerically simulate quantum transport in double gate MOSFETs is described. The program uses a Green’s function approach and a simple treatment of scattering based on the idea of so-called Büttiker probes. The double gate device geometry permits an efficient mode space approach that...

Modeling of Nanoscale Devices

19 Oct 2006 | Papers | Contributor(s): M. P. Anantram, Mark Lundstrom, Dmitri Nikonov

We aim to provide engineers with an introductionto the nonequilibriumGreen’s function (NEGF) approach, which is a powerful conceptual tool and a practical analysismethod to treat nanoscale electronic devices with quantum mechanicaland atomistic effects. We first review the basis for the...

Theory of Ballistic Nanotransistors

27 Nov 2002 | Papers | Contributor(s): Anisur Rahman, Jing Guo, Supriyo Datta, Mark Lundstrom

Numerical simulations are used to guide the development of a simple analytical theory for ballistic field-effect transistors. When two-dimensional electrostatic effects are small, (and when the insulator capacitance is much less than the semiconductor (quantum) capacitance), the model reduces to...

Electron-Phonon and Electron-Electron Interactions in Quantum Transport

14 Jan 2008 | Papers | Contributor(s): Gerhard Klimeck

The objective of this work is to shed light on electron transport through sub-micron semi-conductor structures, where electronic state quantization, electron-electron interactions and electron-phonon interactions are important. We concentrate here on the most developed vertical quantum device,...

Device Physics and Simulation of Silicon Nanowire Transistors

28 Sep 2006 | Papers | Contributor(s): Jing Wang

As the conventional silicon metal-oxide-semiconductor field-effect transistor (MOSFET) approaches its scaling limits, many novel device structures are being extensively explored. Among them, the silicon nanowire transistor (SNWT) has attracted broad attention from both the semiconductor industry...

Application of the Keldysh Formalism to Quantum Device Modeling and Analysis

14 Jan 2008 | Papers | Contributor(s): Roger Lake

The effect of inelastic scattering on quantum electron transport through layered semi-conductor structures is studied numerically using the approach based on the non-equilibrium Green's function formalism of Keldysh, Kadanoff, and Baym. The Markov assumption is not made, and the energy coordinate...

A Quantum Mechanical Analysis of Channel Access Geometry and Series Resistance in Nanoscale Transistors

19 Oct 2006 | Papers | Contributor(s): Ramesh Venugopal, Sebastien Goasguen, Supriyo Datta, Mark Lundstrom

In this paper, we apply a two-dimensional quantum mechanical simulation scheme to study the effect of channel access geometries on device performance. This simulation scheme solves the non-equilibrium Green’s function equations self-consistently with Poisson’s equation and treats the effect of...

A Three-Dimensional Quantum Simulation of Silicon Nanowire Transistors with the Effective-Mass Approximation

30 Oct 2006 | Papers | Contributor(s): Jing Wang, POLIZZI ERIC, Mark Lundstrom

The silicon nanowire transistor (SNWT) is a promising device structure for future integrated circuits, and simulations will be important for understanding its device physics and assessing its ultimate performance limits. In this work, we present a three-dimensional quantum mechanical simulation...

Development of a Nanoelectronic 3-D (NEMO 3-D ) Simulator for Multimillion Atom Simulations and Its Application to Alloyed Quantum Dots

14 Jan 2008 | Papers | Contributor(s): Gerhard Klimeck, Timothy Boykin

Material layers with a thickness of a few nanometers are common-place in today’s semiconductordevices. Before long, device fabrication methods will reach a point at which the other two devicedimensions are scaled down to few tens of nanometers. The total atom count in such deca-nanodevices is...

Electronics from the "Bottom Up": An Intel-NCN@Purdue initiative in nanoelectronics education

05 Jul 2007 | Papers | Contributor(s): Mark Lundstrom, Supriyo Datta, Muhammad A. Alam

In the 1960’s, a group of leaders from industry and academia, the Semiconductor Electronics Education Committee (SEEC), recognized that the age of vacuum tubes was ending, and that engineers would have to be educated differently if they were to realize the opportunities that the new field of...

Resistance of a Molecule

29 Apr 2003 | Papers | Contributor(s): Magnus Paulsson, Ferdows Zahid, Supriyo Datta

In recent years, several experimental groups have reported measurements of the current-voltage (I-V) characteristics of individual or small numbers of molecules. Even three-terminal measurements showing evidence of transistor action has been reported using carbon nanotubes [1, 2] as well as...