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Resources: Compact Models

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  1. Purdue Nanoelectronics Research Laboratory Magnetic Tunnel Junction Model 1.0.0

    21 Jul 2014 | Compact Models | Contributor(s): Xuanyao Fong, Sri Harsha Choday, Panagopoulos Georgios, Charles Augustine, Kaushik Roy

    This is the Verilog-A model of the magnetic tunnel junction developed by the Nanoelectronics Research Laboratory at Purdue University.

  2. TAG Solar Cell Model (p-i-n thin film) 1.0.1

    25 Jul 2014 | Compact Models | Contributor(s): Sourabh Dongaonkar, Xingshu Sun, Mark Lundstrom, Muhammad A. Alam

    The TAG solar cell model is a physics-based compact model for p-i-n thin film solar cells that can be used for panel level simulations.

  3. TAG Solar Cell Model (p-i-n thin film) 1.0.0

    02 Apr 2014 | Compact Models | Contributor(s): Sourabh Dongaonkar, Xingshu Sun, Mark Lundstrom, Muhammad A. Alam

    A new Version of this resource has been released. Please see TAG Solar Cell Model (p-i-n thin film) 1.0.1.The TAG solar cell model is a physics-based compact model for p-i-n thin film solar cells that can be used for panel level simulations.Model Release Components:The model release components...

  4. MIT Virtual Source GaNFET-RF ( MVSG-RF) Model 1.0.0

    09 Jan 2014 | Compact Models | Contributor(s): Ujwal Radhakrishna, Dimitri Antoniadis

    The MVS-G-RF GaN HEMT model is a self-consistent transport/capacitance model for scaled GaN HEMT devices used in RF applications.Model Release Components:MIT Virtual Source GaNFET-RF ( MVSG-RF) Model 1.0.0 in Verilog-A MIT Virtual Source GaNFET-RF ( MVSG-RF) Model 1.0.0 Spectre Netlists MIT...

  5. III-V Tunnel FET Model 1.0.0

    29 May 2014 | Compact Models | Contributor(s): Huichu Liu, Vinay Saripalli, Vijaykrishnan Narayanan, Suman Datta

    The III-V Tunnel FET Model is a look-up table based model, where the device current and capacitance characteristics are obtained from calibrated TCAD Sentaurus simulation. Verilog-A models for two types of III-V Tunnel FET, InAs Homojunction Tunnel FET and GaSb-InAs Heterojunction Tunnel, are...

  6. MVS 1.0.1 Nanotransistor Model (Silicon)

    06 Nov 2013 | Compact Models | Contributor(s): Shaloo Rakheja, Dimitri Antoniadis

    The MIT Virtual Source (MVS) model is a semi-empirical compact model for nanoscale transistors that accurately describes the physics of quasi-ballistic transistors with only a few physical parameters.Components:MVS Model 1.0.1 in Verilog-AMVS Model Circuit Simulation BenchmarksMVS Model...

  7. MVS 1.0.0 Nanotransistor Model (Silicon)

    26 Aug 2013 | Compact Models | Contributor(s): Dimitri Antoniadis, Shaloo Rakheja

    The MIT Virtual Source (MVS) model is a semi-empirical compact model for nanoscale transistors that accurately describes the physics of quasi-ballistic transistors with only a few physical parameters.

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