2T-nC QNRO FeRAM Model

2024-02-14 21:04:06 | Contributor(s): Yi Xiao, Vijaykrishnan Narayanan, Kai Ni | doi:10.21981/NWCZ-2Y11

2 Transistor-n Capacitor (2T-nC) quasi-nondestructive readout (QNRO) FeRAM model is a compact model which can capture the characteristics of the 2T-nC device and is compatible with many circuit simulation platforms.

PHIMO_FeCAP Compact Model

2023-06-26 14:36:26 | Contributor(s): Ning Feng, Ning Ji, Hao Li, Lining Zhang | doi:10.21981/FADT-SQ43

The PHIMO_FeCAP model describes both the quasi-static and non-quasi-static switching of ferroelectric capacitance, featuring the major loop, minor loops with turning points, as well as the dynamic nucleation limited switching.

WHiTe Compact Models

2023-03-24 20:59:26 | Contributor(s): Neal Graham Wood | doi:10.21981/6XDQ-E773

This package provides a set of 4H SiC (silicon carbide) high-temperature integrated device compact models, written in industry standard Verilog-A; currently included are a resistor and a JFET (junction field-effect transistor).

Compact Model Vortex-STNO

2022-11-17 15:52:11 | Contributor(s): Sonal Shreya, Farshad Moradi | doi:10.21981/EC5D-JZ92

we present a Verilog-A-based analytical model of a vortex spin-torque nano oscillator (V-STNO) for enabling circuit-level simulation. The model presented here is functional for both linear and nonlinear dynamics of the magnetic vortex core.

THM-OTFT Compact Model

2022-06-10 20:23:08 | Contributor(s): Alexander Kloes, Jakob Simon Leise, Jakob Pruefer, Aristeidis Nikolaou, Ghader Darbandy | doi:10.21981/Y7S6-EZ63

Charge-based compact model for the DC and AC simulation of organic TFTs

THM-TFET Compact Model

2022-05-16 23:37:38 | Contributor(s): Alexander Kloes, Fabian Horst, Anita Farokhnejad, Michael Graef | doi:10.21981/NGS2-AE57

THM-TFET is a compact model for a double-gate Tunnel-FET, is provided in Verilog-A code and allows for DC, AC and transient circuit simulation.

CCAM Compact Carbon Nanotube Field-Effect Transistor Model

2022-05-16 23:39:34 | Contributor(s): Michael Schroter, Manojkumar Annamalai, Max Haferlach, Martin Claus | doi:10.21981/5E9F-2S90

CCAM is a semi-physical carbon nanotube field-effect transistor model applicable for digital, analog and high frequency applications.

PSPHV LDMOS

2021-11-24 14:32:19 | Contributor(s): Colin McAndrew, kejun xia | doi:10.21981/93B1-9539

This is an update to version 1.0.6 of the PSPHV LDMOS model (an enhanced PSP103.6 model for the core MOS transistor, an updated JFETIDG model for the drift region, JUNCAP2 for the pn-junction diodes, PSP MOS for gate-drain overlap capacitance.

N-MFIS Ferroelectric Tunnel Junction Model

2021-09-21 02:15:25 | Contributor(s): Yi Xiao | doi:10.21981/76B4-CK30

N-MFIS FTJ model is a numerical model which captures the current density versus voltage (J-V) characteristics of the Metal-Ferroelectrics-Interlayer-Semiconductor Ferroelectric Tunnel Junction (MFIS FTJ) with N-type doping.

All-Optical Switching Compact Model

2021-05-02 01:04:32 | Contributor(s): Johan Pelloux-Prayer, Farshad Moradi | doi:10.21981/XFRW-A070

This is a VerilogA compact model that represent All-Optical switching event for use of All-Optical Switching layer in an MTJ structure.

cmIPCS: Compact Model of Four-Terminal, Inline, Indirectly Heated, Phase Change RF Switches

2021-03-07 15:53:32 | Contributor(s): Nicolas Wainstein, Guy Ankonina, Shahar Kvatinsky, Eilam Yalon | doi:10.21981/VAQ8-4A97

cmIPCS is a compact model of Four-Terminal, Inline, Indirectly Heated Phase Change RF Switches validated by finite element method simulations and measurements of IPCS devices.

Peking University Analog-Switching Resistive Random Access Memory (RRAM) Verilog-A model

2021-02-02 02:43:58 | Contributor(s): Lixia Han, Linlin Cai, Jinfeng Kang, Xiaoyan Liu, Peng Huang | doi:10.21981/MRFT-C373

The Peking University Analog-switching RRAM physical model can capture the pulse conductance updates of analog RRAM devices rapidly and accurately. The model is described by Verilog-A and can be embedded in SPICE and Cadence for circuit simulations.

Florida Ferroelectric Tunnel Junction Device Model

2020-10-02 02:40:45 | Contributor(s): Tong Wu, Jing Guo | doi:10.21981/6TFD-GW48

A compact model of the Ferroelectric Tunnel Junctions (FTJs) device is constructed, using the Wentzel–Kramers–Brillouin (WKB) approximation for tunneling current calculation.

PSPHV LDMOS

2020-08-16 14:15:33 | Contributor(s): Colin McAndrew, kejun xia | doi:10.21981/H8TZ-RM88

PSPHV consists of an enhanced PSP103.6 model for the core MOS transistor, an updated JFETIDG model for the drift region, JUNCAP2 for the pn-junction diodes, and two 3-terminal MOS capacitors based on PSP for the gate-drain overlap capacitance.

EPFL HEMT MODEL

2020-05-04 16:05:24 | Contributor(s): Farzan Jazaeri, Jean-Michel Sallese, Majid Shalchian, Matthias Bucher, Nikolaos Makris, Bertrand Parvais | doi:10.21981/PSE5-PP70

The EPFL HEMT Model is a design-oriented charge-based model for dc operation of AlGaAs/GaAs and AlGaN/GaN-based high-mobility field-effect transistors. The intrinsic model is physics-based and the central concept is based on charge linear approximation.

Peking University Resistive-Switching Random Access Memory (RRAM) Verilog-A Model

2019-06-18 16:16:14 | Contributor(s): Weijie Xu, Yudi Zhao, Haitong Li, Jinfeng Kang, Xiaoyan Liu, Peng Huang | doi:10.21981/GG8R-0N73

The Peking University RRAM Model is a SPICE-compatible compact model which is designed for simulation of metal-oxide based RRAM devices. It captures typical DC and AC electrical behaviors of the RRAM devices with physics-based model descriptions.

Unimore Resistive Random Access Memory (RRAM) Verilog-A Model

2019-06-08 22:48:08 | Contributor(s): Francesco Maria Puglisi, Tommaso Zanotti, Paolo Pavan | doi:10.21981/15GF-KX29

The Unimore RRAM Verilog-A model is a physics-based compact model of bipolar RRAM which includes cycle-to-cycle variability, thermal effects, self-heating, and multilevel Random Telegraph Noise (RTN).

Stanford 2D Semiconductor (S2DS) Transistor Model

2018-08-15 02:33:34 | Contributor(s): Saurabh Vinayak Suryavanshi, Eric Pop | doi:10.4231/D39882Q1F

The Stanford 2D Semiconductor (S2DS) model is a physics-based, compact model for field-effect transistors (FETs) based on two-dimensional (2D) semiconductors such as MoS2.

Stanford 2D Semiconductor Quasi-Ballistic Transistor Compact Model

2018-08-15 02:33:04 | Contributor(s): Saurabh Vinayak Suryavanshi, Eric Pop | doi:10.4231/D3F18SH56

The S2DSb compact model is based on MVS model and captures the quasi-ballistic transport in two-dimensional field effect transistors (2D FETs). It also includes a detailed device self-heating model and temperature effects for sub-10 nm 2D FETs.

SPICE based Compact Model for Electrical Switching of Antiferromagnet

2018-08-15 02:32:36 | Contributor(s): Xe Jin Chan, Jan Kaiser, Pramey Upadhyaya | doi:10.4231/D3V97ZT7C

Simulates the electrical switching of antiferromagnets with circuit models