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  1. Notes on Fermi-Dirac Integrals (3rd Edition)

    23 Sep 2008 | Publications | Contributor(s): Raseong Kim, Mark Lundstrom

    Fermi-Dirac integrals appear frequently in semiconductor problems, so an understanding of their properties is essential. The purpose of these notes is to collect in one place, some basic information about Fermi-Dirac integrals and their properties. We also present Matlab functions (in a zipped...

  2. Summary of current status of industrial nanocomposite developments

    25 Jul 2008 | Publications | Contributor(s): Steven L. Masia

    This is a brief summary of the current nanocomposites developed and provided by industry as of July 2008. A variety of industrial references are provided.

  3. Modeling Quantum Transport in Nanoscale Transistors

    30 Oct 2006 | Publications | Contributor(s): Ramesh Venugopal

    As critical transistor dimensions scale below the 100 nm (nanoscale) regime, quan- tum mechanical effects begin to manifest themselves and affect important device performance metrics. Therefore, simulation tools which can be applied to design nanoscale transistors in the future, require new...

  4. Carbon Nanotube Electronics: Modeling, Physics, and Applications

    30 Oct 2006 | Publications | Contributor(s): Jing Guo

    In recent years, significant progress in understanding the physics of carbon nanotube electronic devices and in identifying potential applications has occurred. In a nanotube, low bias transport can be nearly ballistic across distances of several hundred nanometers. Deposition of high-κ gate...

  5. Nanoscale MOSFETs: Physics, Simulation and Design

    26 Oct 2006 | Publications | Contributor(s): Zhibin Ren

    This thesis discusses device physics, modeling and design issues of nanoscale transistors at the quantum level. The principle topics addressed in this report are 1) an implementation of appropriate physics and methodology in device modeling, 2) development of a new TCAD (technology computer...

  6. Introduction to the Keldysh Nonequilibrium Green Function Technique

    06 Oct 2006 | Publications | Contributor(s): A. P. Jauho

    Keldysh nonequilibrium Green function technique is used very widely to describe transport phenomena in mesoscopic systems.The technique is somewhat subtle, and a rigorous treatment would require much more than we have at our disposal, see, for example, the text-bookk by Haug and Jauho [1].The...

  7. Towards Multi-Scale Modeling of Carbon Nanotube Transistors

    20 Sep 2006 | Publications | Contributor(s): Jing Guo, Supriyo Datta, Mark Lundstrom, M. P. Anantram

    Multiscale simulation approaches are needed in order to address scientific and technological questions in the rapidly developing field of carbon nanotube electronics. In this paper, we describe an effort underway to develop a comprehensive capability for multiscale simulation of carbon nanotube...

  8. Nanoscale Device Modeling: From MOSFETs to Molecules

    20 Sep 2006 | Publications | Contributor(s): Prashant Subhash Damle

    This thesis presents a rigorous yet practical approach to model quantum transport in nanoscale electronic devices.As convetional metal oxide semiconductor devices shrink below the one hundred nanometer regime, quantum mechanical effects are beginning to play an increasingly important role in...

  9. Quantum Transport for Nanostructures

    17 Sep 2006 | Publications | Contributor(s): Mathieu Luisier

    Nonequilibrium Green's function techniques, initiated by Schwinger and Kadanoff and Baym allow ones to study the time evolution of a many-particle quantum sys- tem. Knowing the 1-particle Green's functions of a given system, one may evaluate 1-particle quantities like carrier density or current....

  10. Device Physics and Simulation of Silicon Nanowire Transistors

    20 May 2006 | Publications | Contributor(s): Jing Wang

    As the conventional silicon metal-oxide-semiconductor field-effect transistor (MOSFET) approaches its scaling limits, many novel device structures are being extensively explored. Among them, the silicon nanowire transistor (SNWT) has attracted broad attention from both the semiconductor industry...

  11. Notes on the Ballistic MOSFET

    08 Oct 2005 | Publications | Contributor(s): Mark Lundstrom

    When analyzing semiconductor devices, the traditional approach is to assume that carriers scatter frequently from ionized impurities, phonons, surface roughness, etc. so that the average distance between scattering events (the so-called mean-free-path, λ) is much shorter than the device. When...

  12. nanoMOS 2.0: A Two -Dimensional Simulator for Quantum Transport in Double-Gate MOSFETs

    06 Oct 2006 | Publications | Contributor(s): Zhibin Ren, Ramesh Venugopal, Sebastien Goasguen, Supriyo Datta, Mark Lundstrom

    A program to numerically simulate quantum transport in double gate MOSFETs is described. The program uses a Green’s function approach and a simple treatment of scattering based on the idea of so-called Büttiker probes. The double gate device geometry permits an efficient mode space approach that...

  13. Quantum transport in semiconductor nanostructures

    04 Mar 2010 | Publications | Contributor(s): Tillmann Christoph Kubis

    PhD thesis of Tillmann Christoph KubisThe main objective of this thesis is to theoretically predict the stationary charge and spin transport in mesoscopic semiconductor quantum devices in the presence of phonons and device imperfections. It is well known that the nonequilibrium Green's function...

  14. Electrical Conduction through Molecules

    08 Jul 2003 | Publications | Contributor(s): Ferdows Zahid, Magnus Paulsson, Supriyo Datta

    In recent years, several experimental groups have reported measurements of the current-voltage (I-V) characteristics of individual or small numbers of molecules. Even three-terminal measurements showing evidence of transistor action has been reported using carbon nanotubes as well as...

  15. Exploring New Channel Materials for Nanoscale CMOS

    21 May 2006 | Publications | Contributor(s): Anisur Rahman

    The improved transport properties of new channel materials, such as Ge and III-V semiconductors, along with new device designs, such as dual gate, tri gate or FinFETs, are expected to enhance the performance of nanoscale CMOS devices.Novel process techniques, such as ALD, high-k dielectrics, and...

  16. Modeling of Nanoscale Devices

    19 Oct 2006 | Publications | Contributor(s): M. P. Anantram, Mark Lundstrom, Dmitri Nikonov

    We aim to provide engineers with an introductionto the nonequilibriumGreen’s function (NEGF) approach, which is a powerful conceptual tool and a practical analysismethod to treat nanoscale electronic devices with quantum mechanicaland atomistic effects. We first review the basis for the...

  17. Theory of Ballistic Nanotransistors

    27 Nov 2002 | Publications | Contributor(s): Anisur Rahman, Jing Guo, Supriyo Datta, Mark Lundstrom

    Numerical simulations are used to guide the development of a simple analytical theory for ballistic field-effect transistors. When two-dimensional electrostatic effects are small, (and when the insulator capacitance is much less than the semiconductor (quantum) capacitance), the model reduces to...

  18. Electron-Phonon and Electron-Electron Interactions in Quantum Transport

    14 Jan 2008 | Publications | Contributor(s): Gerhard Klimeck

    The objective of this work is to shed light on electron transport through sub-micron semi-conductor structures, where electronic state quantization, electron-electron interactions and electron-phonon interactions are important. We concentrate here on the most developed vertical quantum device,...

  19. Device Physics and Simulation of Silicon Nanowire Transistors

    28 Sep 2006 | Publications | Contributor(s): Jing Wang

    As the conventional silicon metal-oxide-semiconductor field-effect transistor (MOSFET) approaches its scaling limits, many novel device structures are being extensively explored. Among them, the silicon nanowire transistor (SNWT) has attracted broad attention from both the semiconductor industry...

  20. Application of the Keldysh Formalism to Quantum Device Modeling and Analysis

    14 Jan 2008 | Publications | Contributor(s): Roger Lake

    The effect of inelastic scattering on quantum electron transport through layered semi-conductor structures is studied numerically using the approach based on the non-equilibrium Green's function formalism of Keldysh, Kadanoff, and Baym. The Markov assumption is not made, and the energy...

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