
Notes on FermiDirac Integrals (3rd Edition)
23 Sep 2008  Publications  Contributor(s): Raseong Kim, Mark Lundstrom
FermiDirac integrals appear frequently in semiconductor problems, so an understanding of their properties is essential. The purpose of these notes is to collect in one place, some basic information about FermiDirac integrals and their properties. We also present Matlab functions (in a zipped...

Summary of current status of industrial nanocomposite developments
25 Jul 2008  Publications  Contributor(s): Steven L. Masia
This is a brief summary of the current nanocomposites developed and provided by industry as of July 2008. A variety of industrial references are provided.

Modeling Quantum Transport in Nanoscale Transistors
30 Oct 2006  Publications  Contributor(s): Ramesh Venugopal
As critical transistor dimensions scale below the 100 nm (nanoscale) regime, quan tum mechanical effects begin to manifest themselves and affect important device performance metrics. Therefore, simulation tools which can be applied to design nanoscale transistors in the future, require new...

Carbon Nanotube Electronics: Modeling, Physics, and Applications
30 Oct 2006  Publications  Contributor(s): Jing Guo
In recent years, significant progress in understanding the physics of carbon nanotube electronic devices and in identifying potential applications has occurred. In a nanotube, low bias transport can be nearly ballistic across distances of several hundred nanometers. Deposition of highκ gate...

Nanoscale MOSFETs: Physics, Simulation and Design
26 Oct 2006  Publications  Contributor(s): Zhibin Ren
This thesis discusses device physics, modeling and design issues of nanoscale transistors at the quantum level. The principle topics addressed in this report are 1) an implementation of appropriate physics and methodology in device modeling, 2) development of a new TCAD (technology computer...

Introduction to the Keldysh Nonequilibrium Green Function Technique
06 Oct 2006  Publications  Contributor(s): A. P. Jauho
Keldysh nonequilibrium Green function technique is used very widely to describe transport phenomena in mesoscopic systems.The technique is somewhat subtle, and a rigorous treatment would require much more than we have at our disposal, see, for example, the textbookk by Haug and Jauho [1].The...

Towards MultiScale Modeling of Carbon Nanotube Transistors
20 Sep 2006  Publications  Contributor(s): Jing Guo, Supriyo Datta, Mark Lundstrom, M. P. Anantram
Multiscale simulation approaches are needed in order to address scientific and technological questions in the rapidly developing field of carbon nanotube electronics. In this paper, we describe an effort underway to develop a comprehensive capability for multiscale simulation of carbon nanotube...

Nanoscale Device Modeling: From MOSFETs to Molecules
20 Sep 2006  Publications  Contributor(s): Prashant Subhash Damle
This thesis presents a rigorous yet practical approach to model quantum transport in nanoscale electronic devices.As convetional metal oxide semiconductor devices shrink below the one hundred nanometer regime, quantum mechanical effects are beginning to play an increasingly important role in...

Quantum Transport for Nanostructures
17 Sep 2006  Publications  Contributor(s): Mathieu Luisier
Nonequilibrium Green's function techniques, initiated by Schwinger and Kadanoff and Baym allow ones to study the time evolution of a manyparticle quantum sys tem. Knowing the 1particle Green's functions of a given system, one may evaluate 1particle quantities like carrier density or current....

Device Physics and Simulation of Silicon Nanowire Transistors
20 May 2006  Publications  Contributor(s): Jing Wang
As the conventional silicon metaloxidesemiconductor fieldeffect transistor (MOSFET) approaches its scaling limits, many novel device structures are being extensively explored. Among them, the silicon nanowire transistor (SNWT) has attracted broad attention from both the semiconductor industry...

Notes on the Ballistic MOSFET
08 Oct 2005  Publications  Contributor(s): Mark Lundstrom
When analyzing semiconductor devices, the traditional approach is to assume that carriers scatter frequently from ionized impurities, phonons, surface roughness, etc. so that the average distance between scattering events (the socalled meanfreepath, λ) is much shorter than the device. When...

nanoMOS 2.0: A Two Dimensional Simulator for Quantum Transport in DoubleGate MOSFETs
06 Oct 2006  Publications  Contributor(s): Zhibin Ren, Ramesh Venugopal, Sebastien Goasguen, Supriyo Datta, Mark Lundstrom
A program to numerically simulate quantum transport in double gate MOSFETs is described. The program uses a Green’s function approach and a simple treatment of scattering based on the idea of socalled Büttiker probes. The double gate device geometry permits an efficient mode space approach that...

Quantum transport in semiconductor nanostructures
04 Mar 2010  Publications  Contributor(s): Tillmann Christoph Kubis
PhD thesis of Tillmann Christoph KubisThe main objective of this thesis is to theoretically predict the stationary charge and spin transport in mesoscopic semiconductor quantum devices in the presence of phonons and device imperfections. It is well known that the nonequilibrium Green's function...

Electrical Conduction through Molecules
08 Jul 2003  Publications  Contributor(s): Ferdows Zahid, Magnus Paulsson, Supriyo Datta
In recent years, several experimental groups have reported measurements of the currentvoltage (IV) characteristics of individual or small numbers of molecules. Even threeterminal measurements showing evidence of transistor action has been reported using carbon nanotubes as well as...

Exploring New Channel Materials for Nanoscale CMOS
21 May 2006  Publications  Contributor(s): Anisur Rahman
The improved transport properties of new channel materials, such as Ge and IIIV semiconductors, along with new device designs, such as dual gate, tri gate or FinFETs, are expected to enhance the performance of nanoscale CMOS devices.Novel process techniques, such as ALD, highk dielectrics, and...

Modeling of Nanoscale Devices
19 Oct 2006  Publications  Contributor(s): M. P. Anantram, Mark Lundstrom, Dmitri Nikonov
We aim to provide engineers with an introductionto the nonequilibriumGreen’s function (NEGF) approach, which is a powerful conceptual tool and a practical analysismethod to treat nanoscale electronic devices with quantum mechanicaland atomistic effects. We first review the basis for the...

Theory of Ballistic Nanotransistors
27 Nov 2002  Publications  Contributor(s): Anisur Rahman, Jing Guo, Supriyo Datta, Mark Lundstrom
Numerical simulations are used to guide the development of a simple analytical theory for ballistic fieldeffect transistors. When twodimensional electrostatic effects are small, (and when the insulator capacitance is much less than the semiconductor (quantum) capacitance), the model reduces to...

ElectronPhonon and ElectronElectron Interactions in Quantum Transport
14 Jan 2008  Publications  Contributor(s): Gerhard Klimeck
The objective of this work is to shed light on electron transport through submicron semiconductor structures, where electronic state quantization, electronelectron interactions and electronphonon interactions are important. We concentrate here on the most developed vertical quantum device,...

Device Physics and Simulation of Silicon Nanowire Transistors
28 Sep 2006  Publications  Contributor(s): Jing Wang
As the conventional silicon metaloxidesemiconductor fieldeffect transistor (MOSFET) approaches its scaling limits, many novel device structures are being extensively explored. Among them, the silicon nanowire transistor (SNWT) has attracted broad attention from both the semiconductor industry...

Application of the Keldysh Formalism to Quantum Device Modeling and Analysis
14 Jan 2008  Publications  Contributor(s): Roger Lake
The effect of inelastic scattering on quantum electron transport through layered semiconductor structures is studied numerically using the approach based on the nonequilibrium Green's function formalism of Keldysh, Kadanoff, and Baym. The Markov assumption is not made, and the energy...