[Illinois]: Avoidance Learn Simulation
20 Jun 2013 | Tools | Contributor(s): AbderRahman N Sobh, NanoBio Node, Jessica S Johnson
This script simulates avoidance conditioning as reinforcement learning with two upper motoneurons (SUMO and FUMO).
Big Data in Biology: From Genomics to Systems Biology and Medicine
03 Jul 2013 | Online Presentations | Contributor(s): Kevin P. White
Kevin P. White
Kevin White, PhD, combines experimental and computational techniques to understand the networks of factors that control gene expression during development, evolution and disease. He is a Professor in Human Genetics, Ecology & Evolution and Medicine, Section of...
Introduction to Compact Models and Circuit Simulation
21 Jun 2013 | Online Presentations | Contributor(s): Jaijeet Roychowdhury
With NEEDS introduction by Mark Lundstrom. This talk contains a brief introduction to Verilog-A and suggests some initial guidelines for writing Verilog-A versions of NEEDS models.
[Illinois]: Midbrain dopamine neuron responses to temporal-difference learning
21 Jun 2013 | Tools | Contributor(s): Lisa Sproat, Jessica S Johnson, NanoBio Node
Simulates the responses of midbrain dopamine neurons using temporal difference learning
Landauer Approach to Thermoelectrics
23 Jun 2013 | Publications | Contributor(s): Changwook Jeong
Many efforts have been made to search for materials that maximize the thermoelectric (TE) figure of merit, ZT, but for decades, the improvement has been limited because of the interdependent material parameters that determine ZT. Recently, several breakthroughs have been reported by applying...
[Illinois]: Predictor-corrector simulation of parabigeminal nucleus neural responses
24 Jun 2013 | Tools | Contributor(s): Lisa Sproat, NanoBio Node, Jessica S Johnson
Implements a predictor-corrector simulation of the responses of neurons in the parabigeminal nucleus
Optimize Connectivity Profile of Activity-Bubble Network
25 Jun 2013 | Tools | Contributor(s): Jessica S Johnson, NanoBio Node
Use genetic algorithm with binary chromosomes to optimize activity-bubble network.
Device Physics Studies of III-V and Silicon MOSFETS for Digital Logic
28 Jun 2013 | Publications | Contributor(s): Himadri Pal
III-V's are currently gaining a lot of attraction as possible MOSFET channel materials due to their high intrinsic mobility. Several challenges, however, need to be overcome before III-V's can replace silicon (Si) in extremely scaled devices. The effect of low density-of-states of III-V...
Physics and Simulation of Nanoscale Electronic and Thermoelectric Devices
28 Jun 2013 | Publications | Contributor(s): raseong kim
For the past few decades, transistors have been continuously scaled. Dimensions are now at the nanoscale, and device performance has dramatically improved. Nanotechnology is also achieving breakthroughs in thermoelectrics, which have suffered from low efficiencies for decades. As the device...
III-V Nanoscale MOSFETS: Physics, Modeling, and Design
28 Jun 2013 | Publications | Contributor(s): Yang Liu
As predicted by the International Roadmap for Semiconductors (ITRS), power consumption has been the bottleneck for future silicon CMOS technology scaling. To circumvent this limit, researchers are investigating alternative structures and materials, among which III-V compound semiconductor-based...
[Illinois]: Avoidance Learn Simulation with 'Call' Neuron
25 Jun 2013 | Tools | Contributor(s): AbderRahman N Sobh, NanoBio Node, Jessica S Johnson
This script simulates avoidance learning as a reinforcement learning with two upper motoneurons (sumo and fumo) and one "call" neuron.
Semiconductor Device Fundamentals Testbook Module B: Diode Basics
01 Jul 2013 | Teaching Materials | Contributor(s): Robert F. Pierret
This is module B (part 2) of the Testbook for Semiconductor Device Fundamentals.
Device Physics and Simulation of Silicon Nanowire Transistors
28 Jun 2013 | Publications | Contributor(s): Jing Wang
As the conventional silicon metal-oxide-semiconductor field-effect transistor (MOSFET) approaches its scaling limits, many novel device structures are being extensively explored. Among them, the silicon nanowire transistor (SNWT) has attracted broad attention from both the semiconductor industry...
Carbon Nanotube Electronics: Modeling, Physics, and Applications
28 Jun 2013 | Publications | Contributor(s): Jing Guo
In recent years, significant progress in understanding the physics of carbon nanotube electronic devices and in identifying potential applications has occurred. In a nanotube, low bias transport can be nearly ballistic across distances of several hundred nanometers. Deposition of high-k gate...
Modeling Quantum Transport i Nanoscale Transistors
28 Jun 2013 | Publications | Contributor(s): Ramesh Venugopal
As critical transistor dimensions scale below the 100 nm (nanoscale) regime, quantum mechanical effects begin to manifest themselves and affect important device performance metrics. Therefore, simulation tools which can be applied to design nanoscale transistors in the future, require new theory...
Physics and Simulation of Quasi-Ballistic Transport in Nanoscale Transistors
28 Jun 2013 | Publications | Contributor(s): Jung-Hoon Rhew
The formidable progress in microelectronics in the last decade has pushed thechannel length of MOSFETs into decanano scale and the speed of BJTs into hundreds of gigahertz. This progress imposes new challenges on device simulation as the essential physics of carrier transport departs that of...
Nanoscale MOSFETS: Physics, Simulation and Design
28 Jun 2013 | Publications | Contributor(s): Zhibin Ren
This thesis discusses device physics, modeling and design issues of nanoscale transistors at the quantum level. The principle topics addressed in this report are 1) an implementation of appropriate physics and methodology in device modeling, 2)development of a new TCAD (technology computer aided...
Two-Dimensional Scattering Matrix Simulations of Si MOSFET'S
28 Jun 2013 | Publications | Contributor(s): Carl R. Huster
For many years now, solid state device simulators have been based on the drift-diffusion equations. As transistor sizes have been reduced, there has been considerable concern about the predictive capability of these simulators. This concern has lead to the development of a number of simulation...
Direct Solution of the Boltzmann Transport Equation in Nanoscale Si Devices
28 Jun 2013 | Publications | Contributor(s): Kausar Banoo
Predictive semiconductor device simulation faces a challenge these days. As devices are scaled to nanoscale lengths, the collision-dominated transport equations used in current device simulators can no longer be applied. On the other hand, the use of a better, more accurate Boltzmann Transport...
Computational and Experimental Study of Transport in Advanced Silicon Devices
28 Jun 2013 | Publications | Contributor(s): Farzin Assad
In this thesis, we study electron transport in advanced silicon devices by focusing on the two most important classes of devices: the bipolar junction transistor (BJT) and the MOSFET. In regards to the BJT, we will compare and assess the solutions of a physically detailed microscopic model to...