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  1. MAE 6291 Course on Bionsensors and Bionanotechnology

    19 Jun 2013 | Presentation Materials | Contributor(s): jonathan silver

    This course provides an introduction to the properties of, and technologies for detecting, biological molecules such as proteins and nucleic acids, including methods and uses for DNA sequencing. As such, it provides an introduction to molecular-level biology for students with physical...

  2. [Illinois] weSTEM 2013: Science Mom, An Unconventional Balancing Act

    20 Jun 2013 | Online Presentations | Contributor(s): Jackie Kunzler

    Do you ever feel “busy”? Do you ever feel like you need 100 hours in a day? Time management is a coveted skill and is important when pursuing high-pressure, dynamic careers like those in STEM areas often are. Jackie Kunzler has a lifetime of experience with juggling a myriad of professional,...

  3. [Illinois] weSTEM 2013: Discussion Panel

    20 Jun 2013 | Online Presentations | Contributor(s): Marie-Christine Brunet, Amy Chervenak, Ann Peedikayil, Cassandra Rutherford

    weSTEM (Women Empowered in STEM) will provide a forum through which current and future STEM leaders can motivate and inspire each other to excel at the frontier of scientific advancement and develop solutions for the next generation of technical challenges.

  4. Introduction to Compact Models and Circuit Simulation

    19 Jun 2013 | Online Presentations | Contributor(s): Tianshi Wang, Jaijeet Roychowdhury

    The presentation is a gentle introduction to compact models, basic circuit simulation concepts, and flows for developing compact models. The roadmap for the NEEDS-SPICE platform, being developed to ease the process of developing simulation-ready compact models for novel nanodevices, is briefly...

  5. Guidelines for Writing NEEDS-certified Verilog-A Compact Models

    19 Jun 2013 | Online Presentations | Contributor(s): Tianshi Wang, Jaijeet Roychowdhury

    This talk contains a brief introduction to Verilog-A and suggests some initial guidelines for writing Verilog-A versions of NEEDS models. For more about the history of Verilog-A and additional guidelines for writing Verilog-A models, see the presentation by Drs. Geoffrey Coram and Colin McAndrew.

  6. NEEDS Introduction

    19 Jun 2013 | Online Presentations | Contributor(s): Mark Lundstrom

    NEEDS is an initiative supported by the National Science Foundation and the Semiconductor Research Corporation with a mission to develop the critical missing link needed to transform nanoelectronic materials and device research into electronic systems – physics-based compact models for...

  7. Big Data in Biology: From Genomics to Systems Biology and Medicine

    03 Jul 2013 | Online Presentations | Contributor(s): Kevin P. White

  8. Introduction to Compact Models and Circuit Simulation

    21 Jun 2013 | Online Presentations | Contributor(s): Jaijeet Roychowdhury

    With NEEDS introduction by Mark Lundstrom. This talk contains a brief introduction to Verilog-A and suggests some initial guidelines for writing Verilog-A versions of NEEDS models.

  9. Landauer Approach to Thermoelectrics

    23 Jun 2013 | Papers | Contributor(s): Changwook Jeong

    Many efforts have been made to search for materials that maximize the thermoelectric (TE) figure of merit, ZT, but for decades, the improvement has been limited because of the interdependent material parameters that determine ZT. Recently, several breakthroughs have been reported by applying...

  10. Short Course on Nanophotonics

    19 Mar 2015 | Teaching Materials | Contributor(s): Nick Fang

    This course is a shortened version of a graduate course offered to MIT students regarding recent advances in photonics science and technology. The course consists of selected topics in fundamental science of nano-optics, with an overview of nanophotonic tools.

  11. Device Physics Studies of III-V and Silicon MOSFETS for Digital Logic

    28 Jun 2013 | Papers | Contributor(s): Himadri Pal

    III-V's are currently gaining a lot of attraction as possible MOSFET channel materials due to their high intrinsic mobility. Several challenges, however, need to be overcome before III-V's can replace silicon (Si) in extremely scaled devices. The effect of low density-of-states of III-V...

  12. Physics and Simulation of Nanoscale Electronic and Thermoelectric Devices

    28 Jun 2013 | Papers | Contributor(s): raseong kim

    For the past few decades, transistors have been continuously scaled. Dimensions are now at the nanoscale, and device performance has dramatically improved. Nanotechnology is also achieving breakthroughs in thermoelectrics, which have suffered from low efficiencies for decades. As the device...

  13. III-V Nanoscale MOSFETS: Physics, Modeling, and Design

    28 Jun 2013 | Papers | Contributor(s): Yang Liu

    As predicted by the International Roadmap for Semiconductors (ITRS), power consumption has been the bottleneck for future silicon CMOS technology scaling. To circumvent this limit, researchers are investigating alternative structures and materials, among which III-V compound semiconductor-based...

  14. Semiconductor Device Fundamentals Testbook Module B: Diode Basics

    01 Jul 2013 | Teaching Materials | Contributor(s): Robert F. Pierret

    This is module B (part 2) of the Testbook for Semiconductor Device Fundamentals.

  15. Device Physics and Simulation of Silicon Nanowire Transistors

    28 Jun 2013 | Papers | Contributor(s): Jing Wang

    As the conventional silicon metal-oxide-semiconductor field-effect transistor (MOSFET) approaches its scaling limits, many novel device structures are being extensively explored. Among them, the silicon nanowire transistor (SNWT) has attracted broad attention from both the semiconductor industry...

  16. Carbon Nanotube Electronics: Modeling, Physics, and Applications

    28 Jun 2013 | Papers | Contributor(s): Jing Guo

    In recent years, significant progress in understanding the physics of carbon nanotube electronic devices and in identifying potential applications has occurred. In a nanotube, low bias transport can be nearly ballistic across distances of several hundred nanometers. Deposition of high-k gate...

  17. Modeling Quantum Transport i Nanoscale Transistors

    28 Jun 2013 | Papers | Contributor(s): Ramesh Venugopal

    As critical transistor dimensions scale below the 100 nm (nanoscale) regime, quantum mechanical effects begin to manifest themselves and affect important device performance metrics. Therefore, simulation tools which can be applied to design nanoscale transistors in the future, require new theory...

  18. Physics and Simulation of Quasi-Ballistic Transport in Nanoscale Transistors

    28 Jun 2013 | Papers | Contributor(s): Jung-Hoon Rhew

    The formidable progress in microelectronics in the last decade has pushed thechannel length of MOSFETs into decanano scale and the speed of BJTs into hundreds of gigahertz. This progress imposes new challenges on device simulation as the essential physics of carrier transport departs that of...

  19. Nanoscale MOSFETS: Physics, Simulation and Design

    28 Jun 2013 | Papers | Contributor(s): Zhibin Ren

    This thesis discusses device physics, modeling and design issues of nanoscale transistors at the quantum level. The principle topics addressed in this report are 1) an implementation of appropriate physics and methodology in device modeling, 2)development of a new TCAD (technology computer aided...

  20. Two-Dimensional Scattering Matrix Simulations of Si MOSFET'S

    28 Jun 2013 | Papers | Contributor(s): Carl R. Huster

    For many years now, solid state device simulators have been based on the drift-diffusion equations. As transistor sizes have been reduced, there has been considerable concern about the predictive capability of these simulators. This concern has lead to the development of a number of simulation...

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