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  1. Physics and Simulation of Nanoscale Electronic and Thermoelectric Devices

    28 Jun 2013 | Papers | Contributor(s): raseong kim

    For the past few decades, transistors have been continuously scaled. Dimensions are now at the nanoscale, and device performance has dramatically improved. Nanotechnology is also achieving breakthroughs in thermoelectrics, which have suffered from low efficiencies for decades. As the device...

  2. III-V Nanoscale MOSFETS: Physics, Modeling, and Design

    28 Jun 2013 | Papers | Contributor(s): Yang Liu

    As predicted by the International Roadmap for Semiconductors (ITRS), power consumption has been the bottleneck for future silicon CMOS technology scaling. To circumvent this limit, researchers are investigating alternative structures and materials, among which III-V compound semiconductor-based...

  3. Semiconductor Device Fundamentals Testbook Module B: Diode Basics

    01 Jul 2013 | Teaching Materials | Contributor(s): Robert F. Pierret

    This is module B (part 2) of the Testbook for Semiconductor Device Fundamentals.

  4. Device Physics and Simulation of Silicon Nanowire Transistors

    28 Jun 2013 | Papers | Contributor(s): Jing Wang

    As the conventional silicon metal-oxide-semiconductor field-effect transistor (MOSFET) approaches its scaling limits, many novel device structures are being extensively explored. Among them, the silicon nanowire transistor (SNWT) has attracted broad attention from both the semiconductor industry...

  5. Carbon Nanotube Electronics: Modeling, Physics, and Applications

    28 Jun 2013 | Papers | Contributor(s): Jing Guo

    In recent years, significant progress in understanding the physics of carbon nanotube electronic devices and in identifying potential applications has occurred. In a nanotube, low bias transport can be nearly ballistic across distances of several hundred nanometers. Deposition of high-k gate...

  6. Modeling Quantum Transport i Nanoscale Transistors

    28 Jun 2013 | Papers | Contributor(s): Ramesh Venugopal

    As critical transistor dimensions scale below the 100 nm (nanoscale) regime, quantum mechanical effects begin to manifest themselves and affect important device performance metrics. Therefore, simulation tools which can be applied to design nanoscale transistors in the future, require new theory...

  7. Physics and Simulation of Quasi-Ballistic Transport in Nanoscale Transistors

    28 Jun 2013 | Papers | Contributor(s): Jung-Hoon Rhew

    The formidable progress in microelectronics in the last decade has pushed thechannel length of MOSFETs into decanano scale and the speed of BJTs into hundreds of gigahertz. This progress imposes new challenges on device simulation as the essential physics of carrier transport departs that of...

  8. Nanoscale MOSFETS: Physics, Simulation and Design

    28 Jun 2013 | Papers | Contributor(s): Zhibin Ren

    This thesis discusses device physics, modeling and design issues of nanoscale transistors at the quantum level. The principle topics addressed in this report are 1) an implementation of appropriate physics and methodology in device modeling, 2)development of a new TCAD (technology computer aided...

  9. Two-Dimensional Scattering Matrix Simulations of Si MOSFET'S

    28 Jun 2013 | Papers | Contributor(s): Carl R. Huster

    For many years now, solid state device simulators have been based on the drift-diffusion equations. As transistor sizes have been reduced, there has been considerable concern about the predictive capability of these simulators. This concern has lead to the development of a number of simulation...

  10. Direct Solution of the Boltzmann Transport Equation in Nanoscale Si Devices

    28 Jun 2013 | Papers | Contributor(s): Kausar Banoo

    Predictive semiconductor device simulation faces a challenge these days. As devices are scaled to nanoscale lengths, the collision-dominated transport equations used in current device simulators can no longer be applied. On the other hand, the use of a better, more accurate Boltzmann Transport...

  11. Computational and Experimental Study of Transport in Advanced Silicon Devices

    28 Jun 2013 | Papers | Contributor(s): Farzin Assad

    In this thesis, we study electron transport in advanced silicon devices by focusing on the two most important classes of devices: the bipolar junction transistor (BJT) and the MOSFET. In regards to the BJT, we will compare and assess the solutions of a physically detailed microscopic model to...

  12. MAE 6291 Lecture 07: FET, WGM and GMR as Signal Transducers

    07 Jul 2013 | Online Presentations | Contributor(s): jonathan silver

  13. Poster: Integrating ethics and policy into nanotechnology education

    08 Jul 2013 | Presentation Materials | Contributor(s): Mike Gorman

    Presented at the EEC meeting March 2012

  14. An Elementary Note on Skin Hydration Measurement Using Memristive Effect

    09 Jul 2013 | Papers | Contributor(s): Tukaram Dattatray Dongale

    The Memristor was predicted by Prof. L. Chua in 1971 and first prototype was reported by team of HP researcher. The memristor follows interesting relation in the view of magnetic flux and charge. There are tremendous applications areas emerged out in the framework of memristor in last few years....

  15. The Wright Flyer Crankcase: Precipitation Hardening in the First Aerospace Aluminum Alloys

    11 Jul 2013 | Online Presentations | Contributor(s): John Blendell

  16. High-Rate Processing and Advanced Emitter Structures for CIGS PV Module Manufacturing

    11 Jul 2013 | Online Presentations | Contributor(s): B. J. Stanbery

    Achieving both macroscopic homogeneity and nanoscale heterogeneity for non-stoichiometric multinary compounds is a critical challenge for the success of copper indium gallium selenide (CIGS) photovoltaic cells. Co-evaporation yields world record performance, but is also a high-temperature vacuum...

  17. NCN SURF Seminar Series

    12 Jul 2013 | Series | Contributor(s): Joseph M. Cychosz, 70512

    Seminars presented to the NCN SURF (Summer Undergraduate Research Fellowships) students.

  18. Texture-Induced hcp c-axis Alignment in Longitudinal Media

    15 Jul 2013 | Presentation Materials | Contributor(s): Brian Demczyk

    This presentation discusses the development and measurement of c-axis text in longitudinal hard disk media.

  19. [Illinois] weSTEM 2013: The Value of Networking

    18 Jul 2013 | Online Presentations | Contributor(s): Marilyn Tears

    Sometimes the key to success is not only what you know but who you know and the relationships that you develop. Networking is a tool that, if used effectively, can make a big difference in your career. Marilyn Tears, an Illinois Grad, and currently a Project Manager at the ExxonMobil Development...

  20. [Illinois] weSTEM 2013: The Infamous Career Decision: Academia or Industry

    18 Jul 2013 | Online Presentations | Contributor(s): Katherine Rogers Davis

    0Academia or industry after graduate school?..Or both? Kate Rogers Davis, who currently serves as both a software engineer at PowerWorld Corporation and an adjunct assistant professor at the University of Illinois, will speak to her pursuit of industry and academia and how she became interested...

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