Physics and Simulation of Nanoscale Electronic and Thermoelectric Devices
28 Jun 2013 | Papers | Contributor(s): raseong kim
For the past few decades, transistors have been continuously scaled. Dimensions are now at the nanoscale, and device performance has dramatically improved. Nanotechnology is also achieving breakthroughs in thermoelectrics, which have suffered from low efficiencies for decades. As the device...
III-V Nanoscale MOSFETS: Physics, Modeling, and Design
28 Jun 2013 | Papers | Contributor(s): Yang Liu
As predicted by the International Roadmap for Semiconductors (ITRS), power consumption has been the bottleneck for future silicon CMOS technology scaling. To circumvent this limit, researchers are investigating alternative structures and materials, among which III-V compound semiconductor-based...
Semiconductor Device Fundamentals Testbook Module B: Diode Basics
01 Jul 2013 | Teaching Materials | Contributor(s): Robert F. Pierret
This is module B (part 2) of the Testbook for Semiconductor Device Fundamentals.
Device Physics and Simulation of Silicon Nanowire Transistors
28 Jun 2013 | Papers | Contributor(s): Jing Wang
As the conventional silicon metal-oxide-semiconductor field-effect transistor (MOSFET) approaches its scaling limits, many novel device structures are being extensively explored. Among them, the silicon nanowire transistor (SNWT) has attracted broad attention from both the semiconductor industry...
Carbon Nanotube Electronics: Modeling, Physics, and Applications
28 Jun 2013 | Papers | Contributor(s): Jing Guo
In recent years, significant progress in understanding the physics of carbon nanotube electronic devices and in identifying potential applications has occurred. In a nanotube, low bias transport can be nearly ballistic across distances of several hundred nanometers. Deposition of high-k gate...
Modeling Quantum Transport i Nanoscale Transistors
28 Jun 2013 | Papers | Contributor(s): Ramesh Venugopal
As critical transistor dimensions scale below the 100 nm (nanoscale) regime, quantum mechanical effects begin to manifest themselves and affect important device performance metrics. Therefore, simulation tools which can be applied to design nanoscale transistors in the future, require new theory...
Physics and Simulation of Quasi-Ballistic Transport in Nanoscale Transistors
28 Jun 2013 | Papers | Contributor(s): Jung-Hoon Rhew
The formidable progress in microelectronics in the last decade has pushed thechannel length of MOSFETs into decanano scale and the speed of BJTs into hundreds of gigahertz. This progress imposes new challenges on device simulation as the essential physics of carrier transport departs that of...
Nanoscale MOSFETS: Physics, Simulation and Design
28 Jun 2013 | Papers | Contributor(s): Zhibin Ren
This thesis discusses device physics, modeling and design issues of nanoscale transistors at the quantum level. The principle topics addressed in this report are 1) an implementation of appropriate physics and methodology in device modeling, 2)development of a new TCAD (technology computer aided...
Two-Dimensional Scattering Matrix Simulations of Si MOSFET'S
28 Jun 2013 | Papers | Contributor(s): Carl R. Huster
For many years now, solid state device simulators have been based on the drift-diffusion equations. As transistor sizes have been reduced, there has been considerable concern about the predictive capability of these simulators. This concern has lead to the development of a number of simulation...
Direct Solution of the Boltzmann Transport Equation in Nanoscale Si Devices
28 Jun 2013 | Papers | Contributor(s): Kausar Banoo
Predictive semiconductor device simulation faces a challenge these days. As devices are scaled to nanoscale lengths, the collision-dominated transport equations used in current device simulators can no longer be applied. On the other hand, the use of a better, more accurate Boltzmann Transport...
Computational and Experimental Study of Transport in Advanced Silicon Devices
28 Jun 2013 | Papers | Contributor(s): Farzin Assad
In this thesis, we study electron transport in advanced silicon devices by focusing on the two most important classes of devices: the bipolar junction transistor (BJT) and the MOSFET. In regards to the BJT, we will compare and assess the solutions of a physically detailed microscopic model to...
MAE 6291 Lecture 07: FET, WGM and GMR as Signal Transducers
07 Jul 2013 | Online Presentations | Contributor(s): jonathan silver
Poster: Integrating ethics and policy into nanotechnology education
08 Jul 2013 | Presentation Materials | Contributor(s): Mike Gorman
Presented at the EEC meeting March 2012
An Elementary Note on Skin Hydration Measurement Using Memristive Effect
09 Jul 2013 | Papers | Contributor(s): Tukaram Dattatray Dongale
The Memristor was predicted by Prof. L. Chua in 1971 and first prototype was reported by team of HP researcher. The memristor follows interesting relation in the view of magnetic flux and charge. There are tremendous applications areas emerged out in the framework of memristor in last few years....
The Wright Flyer Crankcase: Precipitation Hardening in the First Aerospace Aluminum Alloys
11 Jul 2013 | Online Presentations | Contributor(s): John Blendell
High-Rate Processing and Advanced Emitter Structures for CIGS PV Module Manufacturing
11 Jul 2013 | Online Presentations | Contributor(s): B. J. Stanbery
Achieving both macroscopic homogeneity and nanoscale heterogeneity for non-stoichiometric multinary compounds is a critical challenge for the success of copper indium gallium selenide (CIGS) photovoltaic cells. Co-evaporation yields world record performance, but is also a high-temperature vacuum...
NCN SURF Seminar Series
12 Jul 2013 | Series | Contributor(s): Joseph M. Cychosz, 70512
Seminars presented to the NCN SURF (Summer Undergraduate Research Fellowships) students.
Texture-Induced hcp c-axis Alignment in Longitudinal Media
15 Jul 2013 | Presentation Materials | Contributor(s): Brian Demczyk
This presentation discusses the development and measurement of c-axis text in longitudinal hard disk media.
[Illinois] weSTEM 2013: The Value of Networking
18 Jul 2013 | Online Presentations | Contributor(s): Marilyn Tears
Sometimes the key to success is not only what you know but who you know and the relationships that you develop. Networking is a tool that, if used effectively, can make a big difference in your career. Marilyn Tears, an Illinois Grad, and currently a Project Manager at the ExxonMobil Development...
[Illinois] weSTEM 2013: The Infamous Career Decision: Academia or Industry
18 Jul 2013 | Online Presentations | Contributor(s): Katherine Rogers Davis
0Academia or industry after graduate school?..Or both? Kate Rogers Davis, who currently serves as both a software engineer at PowerWorld Corporation and an adjunct assistant professor at the University of Illinois, will speak to her pursuit of industry and academia and how she became interested...