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  1. The Ultimate Scaling Limit - A Deterministic Single Atom Transistor

    10 Mar 2015 | Online Presentations | Contributor(s): Gerhard Klimeck

    A talk by Dr. Gerhard Klimeck, Director of nanoHUB.org, Purdue University, Founder of NEMOco, LLC @ the University of Michigan.

  2. RF Solid-State Vibrating Transistors

    15 Feb 2014 | Online Presentations | Contributor(s): Dana Weinstein

    In this talk, I will discuss the Resonant Body Transistor (RBT), which can be integrated into a standard CMOS process. The first hybrid RF MEMS-CMOS resonators in Si at the transistor level of IBM’s SOI CMOS process, without any post-processing or packaging will be described. ...

  3. ECE 612 Lecture 9: Subthreshold Conduction

    25 Jan 2014 | Online Presentations | Contributor(s): Mark Lundstrom

    Please view ECE 612 Lecture 12: Subthreshold Conduction from the 2006 teaching.

  4. ECE 612 Lecture 10: Threshold Voltage and MOSFET Capacitances

    25 Jan 2014 | Online Presentations | Contributor(s): Mark Lundstrom

    Please view ECE 612 Lecture 13: Threshold Voltage and MOSFET Capacitances from the 2006 teaching.

  5. Tunnel FETs - Device Physics and Realizations

    10 Jul 2013 | Online Presentations | Contributor(s): Joachim Knoch

    Here, the operating principles of TFETs will be discussed in detail and experimental realizations as well as simulation results will be presented. In particular, the role of the injecting source contact will be elaborated on.

  6. Inelastic Transport in Carbon Nanotube Electronic and Optoelectronic Devices

    28 Jun 2013 | Papers | Contributor(s): Siyu Koswatta

    Discovered in the early 1990's, carbon nanotubes (CNTs) are found to have exceptional physical characteristics compared to conventional semiconductor materials, with much potential for devices surpassing the performance of present-day electronics. Semiconducting CNTs have large carrier...

  7. Modeling Quantum Transport in Nanoscale Transistors

    28 Jun 2013 | Papers | Contributor(s): Ramesh Venugopal

    As critical transistor dimensions scale below the 100 nm (nanoscale) regime, quantum mechanical effects begin to manifest themselves and affect important device performance metrics. Therefore, simulation tools which can be applied to design nanoscale transistors in the future, require new theory...

  8. Physics and Simulation of Quasi-Ballistic Transport in Nanoscale Transistors

    28 Jun 2013 | Papers | Contributor(s): Jung-Hoon Rhew

    The formidable progress in microelectronics in the last decade has pushed thechannel length of MOSFETs into decanano scale and the speed of BJTs into hundreds of gigahertz. This progress imposes new challenges on device simulation as the essential physics of carrier transport departs that of...

  9. Nanoscale MOSFETS: Physics, Simulation and Design

    28 Jun 2013 | Papers | Contributor(s): Zhibin Ren

    This thesis discusses device physics, modeling and design issues of nanoscale transistors at the quantum level. The principle topics addressed in this report are 1) an implementation of appropriate physics and methodology in device modeling, 2)development of a new TCAD (technology computer aided...

  10. Two-Dimensional Scattering Matrix Simulations of Si MOSFET'S

    28 Jun 2013 | Papers | Contributor(s): Carl R. Huster

    For many years now, solid state device simulators have been based on the drift-diffusion equations. As transistor sizes have been reduced, there has been considerable concern about the predictive capability of these simulators. This concern has lead to the development of a number of simulation...

  11. Direct Solution of the Boltzmann Transport Equation in Nanoscale Si Devices

    28 Jun 2013 | Papers | Contributor(s): Kausar Banoo

    Predictive semiconductor device simulation faces a challenge these days. As devices are scaled to nanoscale lengths, the collision-dominated transport equations used in current device simulators can no longer be applied. On the other hand, the use of a better, more accurate Boltzmann Transport...

  12. Computational and Experimental Study of Transport in Advanced Silicon Devices

    28 Jun 2013 | Papers | Contributor(s): Farzin Assad

    In this thesis, we study electron transport in advanced silicon devices by focusing on the two most important classes of devices: the bipolar junction transistor (BJT) and the MOSFET. In regards to the BJT, we will compare and assess the solutions of a physically detailed microscopic model to...

  13. ECE 695A Lecture 18: DC-IV and Charge Pumping Methods

    25 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Outline:Recall: Properties of Interface DefectsFlux-based method 1: Direct Current-Voltage methodFlux-based method 2: Charge pumping methodConclusions

  14. ECE 695A Lecture 16: Review Questions

    22 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Review QuestionWhat is the difference between hot atom dissociation vs. cold atom dissociation?.Many experiments are reported at 77K and 295K. Why these temperatures?.Why is there such a big difference between VT degradation and NIT degradation?.Impact ionization threshold is significantly...

  15. ECE 695A Lecture 17: Subthreshold and Idlin Methods

    21 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

  16. ECE 695A Lecture 15R: Review Questions

    20 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Review Questions:Why is BTBT tunneling important for OFF-state HCI, but nor for ON-state HCI?What type of bond dissociation dominated DeMOS degradation? Provide two supporting arguments. Will universality hold of SiH and SiO bond dissociation occur in equal proportion?Do you expect NBTI to be...

  17. ECE 695A Lecture 14a: Voltage Dependent HCI I

    19 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Outline:Background and Empirical ObservationsTheory of Hot Carriers: Hydrodynamic ModelTheory of Hot Carriers: Monte Carlo ModelTheory of Hot Carriers: Universal ScalingConclusionAppendices

  18. ECE 695A Lecture 14b: Voltage Dependent HCI II

    19 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Outline:Background and Empirical ObservationsTheory of Hot Carriers: Hydrodynamic ModelTheory of Hot Carriers: Monte Carlo ModelTheory of Hot Carriers: Universal ScalingConclusionAppendices

  19. ECE 695A Lecture 14R: Review Questions

    19 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Review QuestionsWhy is Isub called a thermometer of hot electron distribution? Why can you not simply measure hot electrons by looking at the drain current?What are the three methods of HCI voltage acceleration?If theory of universal scaling is so good, why not use it all the time? (Hint: Think...

  20. ECE 695A Lecture 15: Off-state HCI Degradation

    19 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Outline:ON vs. OFF State HCI DegradationOrigin of hot carriers at off-stateSiH vs. SiO – who is getting broken? Voltage acceleration factors by scalingConclusions